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Ding Hua-Jun, Xue Zhong-Ying, Wei Xing, Zhang Bo.Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diode. Acta Physica Sinica, 2022, 71(20): 207302.doi:10.7498/aps.71.20220320 |
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Li Zhong-Hui, Luo Wei-Ke, Yang Qian-Kun, Li Liang, Zhou Jian-Jun, Dong Xun, Peng Da-Qing, Zhang Dong-Guo, Pan Lei, Li Chuan-Hao.Surface morphology improvement of homoepitaxial GaN grown on free-standing GaN substrate by metalorganic chemical vapor deposition. Acta Physica Sinica, 2017, 66(10): 106101.doi:10.7498/aps.66.106101 |
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Zang Hang, Huang Zhi-Sheng, Li Tao, Guo Rong-Ming.Comparative study of irradiation swelling in monocrystalline and polycrystalline silicon carbide. Acta Physica Sinica, 2017, 66(6): 066104.doi:10.7498/aps.66.066104 |
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Ping Yun-Xia, Wang Man-Le, Meng Xiao-Ran, Hou Chun-Lei, Yu Wen-Jie, Xue Zhong-Ying, Wei Xing, Zhang Miao, Di Zeng-Feng, Zhang Bo.Mechanism of NiSi0.7Ge0.3 epitaxial growth by Al interlayer mediation at 700 ℃. Acta Physica Sinica, 2016, 65(3): 036801.doi:10.7498/aps.65.036801 |
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Wang Bao-Zhu, Zhang Xiu-Qing, Zhang Ao-Di, Zhou Xiao-Ran, Bahadir Kucukgok, Na Lu, Xiao Hong-Ling, Wang Xiao-Liang, Ian T. Ferguson.Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition. Acta Physica Sinica, 2015, 64(4): 047202.doi:10.7498/aps.64.047202 |
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Wang Jian-Yuan, Wang Chen, Li Cheng, Chen Song-Yan.Selective area growth of Ge film on Si. Acta Physica Sinica, 2015, 64(12): 128102.doi:10.7498/aps.64.128102 |
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He Su-Ming, Dai Shan-Shan, Luo Xiang-Dong, Zhang Bo, Wang Jin-Bin.Preparation of SiON film by plasma enhanced chemical vapor deposition and passivation on Si. Acta Physica Sinica, 2014, 63(12): 128102.doi:10.7498/aps.63.128102 |
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Zhu Shun-Ming, Gu Ran, Huang Shi-Min, Yao Zheng-Grong, Zhang Yang, Chen Bin, Mao Hao-Yuan, Gu Shu-Lin, Ye Jian-Dong, Zheng You-Dou.Influence and mechanism of H2 in the epitaxial growth of ZnO using metal-organic chemical vapor deposition method. Acta Physica Sinica, 2014, 63(11): 118103.doi:10.7498/aps.63.118103 |
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Zhang Hai-Long, Liu Feng-Zhen, Zhu Mei-Fang.Influence of shadowing effect on morphology and microstructure of silicon thin film in chemical vapor deposition. Acta Physica Sinica, 2014, 63(17): 177303.doi:10.7498/aps.63.177303 |
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Li Tian-Wei, Liu Feng-Zhen, Zhu Mei-Fang.rf excited optical emission spectrum of radicals generated during hot wire chemical vapour deposition for the preparation of microcrystalline silicon thin film. Acta Physica Sinica, 2011, 60(1): 018103.doi:10.7498/aps.60.018103 |
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Dai Xian-Ying, Jin Guo-Qiang, Dong Jie-Qiong, Wang Chuan-Bao, Zhao Xian, Chu Ya-Ping, Xi Peng-Cheng, Deng Wen-Hong, Zhang He-Ming, Hao Yue.A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materials. Acta Physica Sinica, 2011, 60(6): 065101.doi:10.7498/aps.60.065101 |
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Cheng Zhi-Da, Zhu Jing, Sun Tie-Yu.Stability and magnetism of fcc single-crystal nickel nanowires by first principles calculations. Acta Physica Sinica, 2011, 60(3): 037504.doi:10.7498/aps.60.037504 |
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Liu Li-Ying, Zhang Jia-Liang, Guo Qing-Chao, Wang De-Zhen.Diagnostics of the atmospheric pressure plasma jets for plasma enhanced chemical vapor deposition of polycrystalline silicon thin film. Acta Physica Sinica, 2010, 59(4): 2653-2660.doi:10.7498/aps.59.2653 |
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Liu Zhao-Jun, Meng Zhi-Guo, Zhao Sun-Yun, Kwok Hoi Sing, Wu Chun-Ya, Xiong Shao-Zhen.Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source. Acta Physica Sinica, 2010, 59(4): 2775-2782.doi:10.7498/aps.59.2775 |
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Zhao Shu-Yun, Wu Chun-Ya, Liu Zhao-Jun, Li Xue-Dong, Wang Zhong, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Fang.Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source. Acta Physica Sinica, 2006, 55(11): 6095-6100.doi:10.7498/aps.55.6095 |
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Zhao Shu-Yun, Wu Chun-Ya, Li Juan, Liu Jian-Ping, Zhang Xiao-Dan, Zhang Li-Zhu, Meng Zhi-Guo, Xiong Shao-Zhen.The research on metal induced crystallization with chemical source. Acta Physica Sinica, 2006, 55(2): 825-829.doi:10.7498/aps.55.825 |
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Yu Wei, Wang Bao-Zhu, Yang Yan-Bin, Lu Wan-Bing, Fu Guang-Sheng.Optical emission diagnosis of helicon-wave-plasma-enhanced chemical vapor deposition of nanocrystalline silicon. Acta Physica Sinica, 2005, 54(5): 2394-2398.doi:10.7498/aps.54.2394 |
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Wang Liu-Jiu, Zhu Mei-Fang, Liu Feng-Zhen, Liu Jin-Long, Han Yi-Ｑin.Structual and optoelectronic properties of polycrystalline silicon thin films p repared by hot-wire chemical vapor deposition at low temperatures. Acta Physica Sinica, 2003, 52(11): 2934-2938.doi:10.7498/aps.52.2934 |
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SUN LI, CHEN YAN-FENG, YU TAO, MING NAI-BEN, JIANG XIAO-MING, XIU LI-SONG.PREPARATION AND CHARACTERIZATION OF ＰｂＴｉＯ３ THIN FILMS BY METALORGANIC CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica, 1996, 45(10): 1729-1736.doi:10.7498/aps.45.1729 |
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GUO YUAN-HENG, JIA CUN-LI.AN ELECTRON STIMULATED DESORPTION STUDY OF OXYGEN ON NICKEL. Acta Physica Sinica, 1988, 37(7): 1103-1109.doi:10.7498/aps.37.1103 |
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