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Li Wei, Zhu Hui-Wen, Sun Tong, Qu Wen-Shan, Li Jian-Gang, Yang Hui, Gao Zhi-Xiang, Shi Wei, Wei Bin, Wang Hua.High endurance organic resistive switching memory based on 1, 2-dicyanobenzene and polymer composites. Acta Physica Sinica, 2023, 72(4): 048501.doi:10.7498/aps.72.20221507 |
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Zhou Shu-Ren, Zhang Hong, Mo Hui-Lan, Liu Hao-Wen, Xiong Yuan-Qiang, Li Hong-Lin, Kong Chun-Yang, Ye Li-Juan, Li Wan-Jun.Effect of N-doping on performance of
${\boldsymbol\beta}$
-Ga2O3thin film solar-blind ultraviolet detector. Acta Physica Sinica, 2021, 70(17): 178503.doi:10.7498/aps.70.20210434 |
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Zhu Xiao-Qin, Hu Yi-Feng.Application of Ge50Te50/Zn15Sb85nanocomposite multilayer films in high thermal stability and low power phase change memory. Acta Physica Sinica, 2020, 69(14): 146101.doi:10.7498/aps.69.20200502 |
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Cai Meng-Yuan, Tang Chun-Mei, Zhang Qiu-Yue.Optimized Li storage performance of B, N doped graphyne as Li-ion battery anode materials. Acta Physica Sinica, 2019, 68(21): 213601.doi:10.7498/aps.68.20191161 |
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Guo Jia-Jun, Dong Jing-Yu, Kang Xin, Chen Wei, Zhao Xu.Effect of transition metal element X (X=Mn, Fe, Co, and Ni) doping on performance of ZnO resistive memory. Acta Physica Sinica, 2018, 67(6): 063101.doi:10.7498/aps.67.20172459 |
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Zhang Mei, Wen Li-Wei, Ding Jun, Zhang Ying.First-principles study on the uniaxial pressure induced topological quantum phase transitions of Ge2X2Te5 (X =Sb, Bi) thin films. Acta Physica Sinica, 2015, 64(10): 107301.doi:10.7498/aps.64.107301 |
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Sun Jing-Yang, Wang Dong-Ming, Lü Ye-Gang, Wang Miao, Wang Yi-Man, Shen Xiang, Wang Guo-Xiang, Dai Shi-Xun.Structure and phase change in Cu-Ge3Sb2Te5 films for use in phase change random access memory. Acta Physica Sinica, 2015, 64(1): 016103.doi:10.7498/aps.64.016103 |
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Tian Man-Man, Wang Guo-Xiang, Shen Xiang, Chen Yi-Min, Xu Tie-Feng, Dai Shi-Xun, Nie Qiu-Hua.Phase change properties of ZnSb-doped Ge2Sb2Te5 films. Acta Physica Sinica, 2015, 64(17): 176802.doi:10.7498/aps.64.176802 |
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Yang Guang-Min, Xu Qiang, Li Bing, Zhang Han-Zhuang, He Xiao-Guang.Quantum capacitance performance of different nitrogen doping configurations of graphene. Acta Physica Sinica, 2015, 64(12): 127301.doi:10.7498/aps.64.127301 |
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Wang Dong-Min, Lü Ye-Gang, Song san-Nian, Wang Miao, Shen Xiang, Wang Guo-Xiang, Dai Shi-Xun, Song Zhi-Tang.Effect of Cu on the structure and phase-change characteristics of Sb2Te film for high-speed phase change random access memory. Acta Physica Sinica, 2015, 64(15): 156102.doi:10.7498/aps.64.156102 |
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Dai Guang-Zhen, Dai Yue-Hua, Xu Tai-Long, Wang Jia-Yu, Zhao Yuan-Yang, Chen Jun-Ning, Liu Qi.First principles study on influence of oxygen vacancy in HfO2 on charge trapping memory. Acta Physica Sinica, 2014, 63(12): 123101.doi:10.7498/aps.63.123101 |
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Wang Jia-Yu, Dai Yue-Hua, Zhao Yuan-Yang, Xu Jian-Bin, Yang Fei, Dai Guang-Zhen, Yang Jin.Research on charge trapping memory’s over erase. Acta Physica Sinica, 2014, 63(20): 203101.doi:10.7498/aps.63.203101 |
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Wang Jia-Yu, Zhao Yuan-Yang, Xu Jian-Bin, Dai Yue-Hua.Effect of defect on the programming speed of charge trapping memories. Acta Physica Sinica, 2014, 63(5): 053101.doi:10.7498/aps.63.053101 |
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He Mei-Lin, Xu Jing-Ping, Chen Jian-Xiong, Liu Lu.Comparison between memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layer. Acta Physica Sinica, 2013, 62(23): 238501.doi:10.7498/aps.62.238501 |
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Lin Qi, Chen Yu-Hang, Wu Jian-Bao, Kong Zong-Min.Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons. Acta Physica Sinica, 2011, 60(9): 097103.doi:10.7498/aps.60.097103 |
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Liao Yuan-Bao, Xu Ling, Yang Fei, Liu Wen-Qiang, Liu Dong, Xu Jun, Ma Zhong-Yuan, Chen Kun-Ji.Study of structural and electrical properties of phase-change materials Ge1Sb2Te4 and Ge2Sb2Te5 thin films. Acta Physica Sinica, 2010, 59(9): 6563-6568.doi:10.7498/aps.59.6563 |
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Xu Ling, Tang Chao-Qun, Dai Lei, Tang Dai-Hai, Ma Xin-Guo.First-principles study of the electronic structure of N-doping anatase TiO2. Acta Physica Sinica, 2007, 56(2): 1048-1053.doi:10.7498/aps.56.1048 |
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Peng Li-Ping, Xu Ling, Yin Jian-Wu.First-principles study the optical properties of anatase TiO2 by N-doping. Acta Physica Sinica, 2007, 56(3): 1585-1589.doi:10.7498/aps.56.1585 |
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Zhang Zu-Fa, Zhang Yin, Feng Jie, Cai Yan-Fei, Lin Yin-Yin, Cai Bing-Chu, Tang Ting-Ao, Chen Bomy.Study of Si-doped Sb2Te3 films for phase change memory. Acta Physica Sinica, 2007, 56(7): 4224-4228.doi:10.7498/aps.56.4224 |
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Sun Jin-Peng, Wang Tai-Hong.Coulomb blockade three-valued single-electron memory. Acta Physica Sinica, 2003, 52(10): 2563-2568.doi:10.7498/aps.52.2563 |
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