[1] |
Su Le, Wang Cai-Lin, Tan Zai-Chao, Luo Yin, Yang Wu-Hua, Zhang Chao.Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2024, 73(11): 118501.doi:10.7498/aps.73.20240144 |
[2] |
Zhang Zhao-Quan, Shi Peng-Peng, Gou Xiao-Fan.Analytical model of magnetic Barkhausen stress test of ferromagnetic plates. Acta Physica Sinica, 2022, 71(9): 097501.doi:10.7498/aps.71.20212253 |
[3] |
Zhang Qing, Wu Xin-Jun.Analytical modeling for the plate with a flat-bottom hole based on the reflection and transmission theory in pulsed eddy current testing. Acta Physica Sinica, 2017, 66(3): 038102.doi:10.7498/aps.66.038102 |
[4] |
Li Shi-Song, Zhang Zhong-Hua, Zhao Wei, Huang Song-Ling, Fu Zhuang.Analytical model of electrostatic force generated by edge effect of a Kelvin capacitor based on conformal transformation. Acta Physica Sinica, 2015, 64(6): 060601.doi:10.7498/aps.64.060601 |
[5] |
Zhang Na, Cao Meng, Cui Wan-Zhao, Hu Tian-Cun, Wang Rui, Li Yun.Analytical model of secondary electron yield from metal surface with regular structures. Acta Physica Sinica, 2015, 64(20): 207901.doi:10.7498/aps.64.207901 |
[6] |
Wu Liang-Hai, Zhang Jun, Fan Zhi-Guo, Gao Jun.An analytical model for skylight polarization pattern with multiple scattering. Acta Physica Sinica, 2014, 63(11): 114201.doi:10.7498/aps.63.114201 |
[7] |
Liang Jing-Hui, Zhang Xiao-Feng, Qiao Ming-Zhong, Xia Yi-Hui, Li Geng, Chen Jun-Quan.Analytic model of discrete random magnetizing Halbach PM motor. Acta Physica Sinica, 2013, 62(15): 150501.doi:10.7498/aps.62.150501 |
[8] |
Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Li Yu-Chen.Analytical modeling for drain current of strained Si NMOSFET. Acta Physica Sinica, 2013, 62(23): 237103.doi:10.7498/aps.62.237103 |
[9] |
Su Li-Na, Gu Xiao-Feng, Qin Hua, Yan Da-Wei.Analytical I-V model and numerical analysis of single electron transistor. Acta Physica Sinica, 2013, 62(7): 077301.doi:10.7498/aps.62.077301 |
[10] |
Huang Yuan, Xu Jing-Ping, Wang Li-Sheng, Zhu Shu-Yan.Effects of different scattering mechanisms on inversion-channel electron mobility in Al2O3/InxGa1-xAs nMOSFET. Acta Physica Sinica, 2013, 62(15): 157201.doi:10.7498/aps.62.157201 |
[11] |
Han Ming-Jun, Ke Dao-Ming, Chi Xiao-Li, Wang Min, Wang Bao-Tong.A 2D semi-analytical model for the potential distribution of ultra-short channel MOSFET. Acta Physica Sinica, 2013, 62(9): 098502.doi:10.7498/aps.62.098502 |
[12] |
Cao Lei, Liu Hong-Xia, Wang Guan-Yu.Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica, 2012, 61(1): 017105.doi:10.7498/aps.61.017105 |
[13] |
Liu Bao-Jun, Cai Li.Analytical model of single event crosstalk in near space. Acta Physica Sinica, 2012, 61(19): 196103.doi:10.7498/aps.61.196103 |
[14] |
Li Cong, Zhuang Yi-Qi, Han Ru, Zhang Li, Bao Jun-Lin.Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain. Acta Physica Sinica, 2012, 61(7): 078504.doi:10.7498/aps.61.078504 |
[15] |
Liu Jing-Wang, Du Zhen-Hui, Li Jin-Yi, Qi Ru-Bin, Xu Ke-Xin.Analytical model for the tuning characteristics of static, dynamic, and transient behaviors in temperature and injection current of DFB laser diodes. Acta Physica Sinica, 2011, 60(7): 074213.doi:10.7498/aps.60.074213 |
[16] |
Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang.Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica, 2011, 60(11): 116103.doi:10.7498/aps.60.116103 |
[17] |
Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong.2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric. Acta Physica Sinica, 2008, 57(6): 3807-3812.doi:10.7498/aps.57.3807 |
[18] |
Bao Jun-Lin, Zhuang Yi-Qi, Du Lei, Li Wei-Hua, Wan Chang-Xing, Zhang Ping.A unified model for 1/f noise in n-channel and p-channel MOSFETs. Acta Physica Sinica, 2005, 54(5): 2118-2122.doi:10.7498/aps.54.2118 |
[19] |
Wang Yuan, Zhang Yi-Men, Zhang Yu-Ming, Tang Xiao-Yan.A simulation study of 6H-SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica, 2003, 52(10): 2553-2557.doi:10.7498/aps.52.2553 |
[20] |
Xu Chang-Fa, Yang Yin-Tang, Liu Li.. Acta Physica Sinica, 2002, 51(5): 1113-1117.doi:10.7498/aps.51.1113 |