[1] |
Wu Fan-Fan, Ji Yi-Ru, Yang Wei, Zhang Guang-Yu.Experimental research progress of electronic band structure and low temperature transport based on molybdenum disulfide. Acta Physica Sinica, 2022, 71(12): 127306.doi:10.7498/aps.71.20220015 |
[2] |
Xu Jia-Ling, Jia Li-Yun, Liu Chao, Wu Quan, Zhao Ling-Jun, Ma Li, Hou Deng-Lu.Band structure of topological insulator Li(Na)AuS. Acta Physica Sinica, 2021, 70(2): 027101.doi:10.7498/aps.70.20200885 |
[3] |
Yang Wen, Song Jian-Jun, Ren Yuan, Zhang He-Ming.Band structure model of modified Ge for optical device application. Acta Physica Sinica, 2018, 67(19): 198502.doi:10.7498/aps.67.20181155 |
[4] |
Liu Huan, Li Gong-Ping, Xu Nan-Nan, Lin Qiao-Lu, Yang Lei, Wang Cang-Long.A simulation study of structural and optical properties in Cu ions implantation single-crystal rutile. Acta Physica Sinica, 2016, 65(20): 206102.doi:10.7498/aps.65.206102 |
[5] |
Jin Feng, Zhang Zhen-Hua, Wang Cheng-Zhi, Deng Xiao-Qing, Fan Zhi-Qiang.Twisting effects on energy band structures and transmission behaviors of graphene nanoribbons. Acta Physica Sinica, 2013, 62(3): 036103.doi:10.7498/aps.62.036103 |
[6] |
Sun Wei-Feng, Zheng Xiao-Xia.First-principles study of interface relaxation effects on interface structure, band structure and optical property of InAs/GaSb superlattices. Acta Physica Sinica, 2012, 61(11): 117301.doi:10.7498/aps.61.117301 |
[7] |
Gao Shang-Peng, Zhu Tong.Quasiparticle band structure calculation for SiC using self-consistent GW method. Acta Physica Sinica, 2012, 61(13): 137103.doi:10.7498/aps.61.137103 |
[8] |
Liu Zhu, Zhao Zhi-Fei, Guo Hao-Min, Wang Yu-Qi.Band structure and optical absorption in InAs/GaSb quantum well. Acta Physica Sinica, 2012, 61(21): 217303.doi:10.7498/aps.61.217303 |
[9] |
Lin Qi, Chen Yu-Hang, Wu Jian-Bao, Kong Zong-Min.Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons. Acta Physica Sinica, 2011, 60(9): 097103.doi:10.7498/aps.60.097103 |
[10] |
Ma Xiao-Feng, Wang Yi-Zhe, Zhou Cheng-Yue.Structural and optical properties of a-Si ∶H/SiO2 multiple quantum wells. Acta Physica Sinica, 2011, 60(6): 068102.doi:10.7498/aps.60.068102 |
[11] |
Dong Hua-Feng, Wu Fu-Gen, Mu Zhong-Fei, Zhong Hui-Lin.Effect of basis configuration on acoustic band structure in two-dimensional complex phononic crystals. Acta Physica Sinica, 2010, 59(2): 754-758.doi:10.7498/aps.59.754 |
[12] |
Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Band structure of strained Si1-xGex. Acta Physica Sinica, 2009, 58(11): 7947-7951.doi:10.7498/aps.58.7947 |
[13] |
Wang Wei, Sun Jia-Fa, Liu Mei, Liu Su.First-principles calculations on the electronic band structure of β-Pyrochlore superconductors AOs2O6 (A=K,Rb,Cs). Acta Physica Sinica, 2009, 58(8): 5632-5639.doi:10.7498/aps.58.5632 |
[14] |
Shao Ming-Zhu, Luo Shi-Yu.The sine-squared potential and the band structure for channelling effects. Acta Physica Sinica, 2007, 56(6): 3407-3410.doi:10.7498/aps.56.3407 |
[15] |
Chen De-Yan, Lü Tie-Yu, Huang Mei-Chun.GW quasiparticle band structure of BaSe. Acta Physica Sinica, 2006, 55(7): 3597-3600.doi:10.7498/aps.55.3597 |
[16] |
Wu Yun-Wen, Hai Wen-Hua.Energy eigenstates of two ions in a two-dimensional paul trap. Acta Physica Sinica, 2006, 55(7): 3315-3321.doi:10.7498/aps.55.3315 |
[17] |
Wu Yun-Wen, Hai Wen-Hua, Cai Li-Hua.Energy band structure of two ions in a one-dimensional Paul trap. Acta Physica Sinica, 2006, 55(2): 583-589.doi:10.7498/aps.55.583 |
[18] |
Nie Zong-Xiu, Li Jiao-Mei, Jiang Yu-Rong, Zhu Yan-Wu, Guan Hua, Shu Hua-Lin, Shao Hui-Li, Gao Ke-Lin.Character of store and reaction of ground state multiply charged Fen+(n=1—3) ions in a Paul trap. Acta Physica Sinica, 2004, 53(4): 1034-1038.doi:10.7498/aps.53.1034 |
[19] |
WANG REN-ZHI, ZHENG YONG-MEI, LI SHU-PING.STUDY ON PHYSICAL CONNOTATION OF AVERAGE BOND ENERGY Em. Acta Physica Sinica, 2001, 50(2): 273-277.doi:10.7498/aps.50.273 |
[20] |
HE MING, DUAN YI-WU, ZHU XI-WEN, SHI LEI.QUANTUM PROBLEM OF THREE FERMI IONS WITH COPLANAR CONFIGURATION IN A PAUL TRAP. Acta Physica Sinica, 2001, 50(2): 198-203.doi:10.7498/aps.50.198 |