[1] |
Qiu Kang-Sheng, Zhao Yan-Hui, Liu Xiang-Bo, Feng Bao-Hua, Xu Xiu-Lai.Whispering gallery modes in a bent ZnO microwire. Acta Physica Sinica, 2014, 63(17): 177802.doi:10.7498/aps.63.177802 |
[2] |
Liu Gui-Li, Li Yong.The electronic theory study on high-temperature oxidation mechanism of TiAl alloy. Acta Physica Sinica, 2012, 61(17): 177101.doi:10.7498/aps.61.177101 |
[3] |
Yuan Wen-Jia, Zhang Yue-Guang, Shen Wei-Dong, Ma Qun, Liu Xu.Characteristics of Nb2O5 thin films deposited by ion beam sputtering. Acta Physica Sinica, 2011, 60(4): 047803.doi:10.7498/aps.60.047803 |
[4] |
Li Tian-Jing, Li Gong-Ping, Ma Jun-Ping, Gao Xing-Xin.Effect of Co+ implantation on structural and optical properties in single-crystal TiO2. Acta Physica Sinica, 2011, 60(11): 116102.doi:10.7498/aps.60.116102 |
[5] |
Liu Gui-Li, Yang Jie.Electronic theory study on high temperature oxidation mechanism of Nb-Ti-Al alloy. Acta Physica Sinica, 2010, 59(7): 4939-4944.doi:10.7498/aps.59.4939 |
[6] |
Liu Gui-Li.An electronic theoretical study of the high-temperature oxidation behavior of Fe-Cr-Al alloy. Acta Physica Sinica, 2010, 59(1): 494-498.doi:10.7498/aps.59.494 |
[7] |
Zhang Guo-ying, Li Dan, Liang Ting.Electronic structure and high-temperature oxidation behavior of Nb alloy. Acta Physica Sinica, 2010, 59(11): 8031-8036.doi:10.7498/aps.59.8031 |
[8] |
Liu Gui-Li.High temperature oxidation mechanism of Nb-Al alloys. Acta Physica Sinica, 2010, 59(1): 499-503.doi:10.7498/aps.59.499 |
[9] |
Ni Jin-Yu, Hao Yue, Zhang Jin-Cheng, Duan Huan-Tao, Zhang Jin-Feng.Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs. Acta Physica Sinica, 2009, 58(7): 4925-4930.doi:10.7498/aps.58.4925 |
[10] |
Li Hong, Wang Shao-Qing, Ye Heng-Qiang.Influence of Nb doping on oxidation resistance of γ-TiAl:A first principles study. Acta Physica Sinica, 2009, 58(13): 224-S229.doi:10.7498/aps.58.224 |
[11] |
Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong.Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica, 2009, 58(5): 3302-3308.doi:10.7498/aps.58.3302 |
[12] |
Fu Wei-Jia, Liu Zhi-Wen, Liu Ming, Mu Zong-Xin, Zhang Qing-Yu, Guan Qing-Feng, Chen Kang-Min.Growth behavior of ZnO nanoparticles formed on Zn implanted Si(001) combined with thermal oxidation. Acta Physica Sinica, 2009, 58(8): 5693-5699.doi:10.7498/aps.58.5693 |
[13] |
Hu Liang-Jun, Chen Yong-Hai, Ye Xiao-Ling, Wang Zhan-Guo.Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation. Acta Physica Sinica, 2007, 56(8): 4930-4935.doi:10.7498/aps.56.4930 |
[14] |
Chen Zhi-Quan, Kawasuso Atsuo.Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, 2006, 55(8): 4353-4357.doi:10.7498/aps.55.4353 |
[15] |
Zhong Hong-Mei, Chen Xiao-Shuang, Wang Jin-Bin, Xia Chang-Sheng, Wang Shao-Wei, Li Zhi-Feng, Xu Wen-Lan, Lu Wei.Preparation of ZnMnO by ion implantation and its spectral characterization. Acta Physica Sinica, 2006, 55(4): 2073-2077.doi:10.7498/aps.55.2073 |
[16] |
Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min.Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica, 2006, 55(10): 5487-5493.doi:10.7498/aps.55.5487 |
[17] |
Cha Li-Mei, Zhang Peng-Xiang, H.U.Habermeier.The preparation and properties of bilayer manganite films. Acta Physica Sinica, 2003, 52(2): 498-502.doi:10.7498/aps.52.498 |
[18] |
Zhu Bo, Cai Xun, Wang Cheng-Guo, Cai Hua-Su.Studies on the relationship between acoustic emission characteristics and fractu re toughness of materials. Acta Physica Sinica, 2003, 52(8): 1960-1964.doi:10.7498/aps.52.1960 |
[19] |
Fang Zhi-Jun, Xia Yi-Ben, Wang Lin-Jun, Zhang Wei-Li, Ma Zhe-Guo, Zhang Ming-Long.Study of the stress observed in diamond films on carbon-implanted alumina surfaces. Acta Physica Sinica, 2003, 52(4): 1028-1033.doi:10.7498/aps.52.1028 |
[20] |
Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng.. Acta Physica Sinica, 2002, 51(3): 629-634.doi:10.7498/aps.51.629 |