[1] |
Du Wei, Yin Ge, Ma Yun-Gui.High-performance near-field thermophotovoltaic device with CaF2/W multilayer hyperbolic metamaterial emitter. Acta Physica Sinica, 2020, 69(20): 204203.doi:10.7498/aps.69.20200892 |
[2] |
Wang Zong, Hou Xing-Yuan, Pan Bo-Jin, Gu Ya-Dong, Zhang Meng-Di, Zhang Fan, Chen Gen-Fu, Ren Zhi-An, Shan Lei.Point-contact Andreev reflection spectroscopy on Re3W superconductor. Acta Physica Sinica, 2019, 68(1): 017402.doi:10.7498/aps.68.20181996 |
[3] |
Zhang Jin-Shuai, Huang Qiu-Shi, Jiang Li, Qi Run-Ze, Yang Yang, Wang Feng-Li, Zhang Zhong, Wang Zhan-Shan.Stress and structure properties of X-ray W/Si multilayer under low temperature annealing. Acta Physica Sinica, 2016, 65(8): 086101.doi:10.7498/aps.65.086101 |
[4] |
Zhi Chao-Hu, Liu Bo, Ren Ding, Yang Bin, Lin Li-Wei.Microstructure evolution of W(Mo)/Cu nanometer multilayer films under He+ ion irradiation. Acta Physica Sinica, 2013, 62(15): 156801.doi:10.7498/aps.62.156801 |
[5] |
Liu Wang, Wu Qi-Qi, Chen Shun-Li, Zhu Jing-Jun, An Zhu, Wang Yuan.Helium effect on the stability of the interface of Cu/W nanomultilayer. Acta Physica Sinica, 2012, 61(17): 176802.doi:10.7498/aps.61.176802 |
[6] |
Peng Yong-Gang, Zheng Yu-Jun.Dynamic properties of bilayer membrane. Acta Physica Sinica, 2011, 60(8): 088701.doi:10.7498/aps.60.088701 |
[7] |
Sun Hao-Liang, Song Zhong-Xiao, Xu Ke-Wei.Effect of substrate constraint on stress-induced cracking of sputtered tungsten thin film. Acta Physica Sinica, 2008, 57(8): 5226-5231.doi:10.7498/aps.57.5226 |
[8] |
Ma Mei, Cai Lei, Wang Xing-Fu, Hu Jing-Guo.Enhanciement of exchange bias with diluted antiferromagnets in FM/AFM bilayers. Acta Physica Sinica, 2007, 56(1): 529-534.doi:10.7498/aps.56.529 |
[9] |
.The surface mapping and crystal orientation of body-centered cubic thin metal tungsten films of different thickness. Acta Physica Sinica, 2007, 56(12): 7248-7254.doi:10.7498/aps.56.7248 |
[10] |
Pan Jing, Tao Yong-Chun, Hu Jing-Guo.The exchange bias in ferromagnetic/antiferro-magnetic bilayers under the stress field. Acta Physica Sinica, 2006, 55(6): 3032-3037.doi:10.7498/aps.55.3032 |
[11] |
Pan Jing, Ma Mei, Zhou Lan, Hu Jing-Guo.Ferromagnetic resonance in ferromagnetic/antiferromagnetic bilayers under the stress field. Acta Physica Sinica, 2006, 55(2): 897-903.doi:10.7498/aps.55.897 |
[12] |
Jiang Yi-Ming, Xie Heng-Bo, Guo Feng, Liu Ping, Li Jin.Theoretical study on the transport in metal/organic bi-layer thin films. Acta Physica Sinica, 2005, 54(12): 5769-5773.doi:10.7498/aps.54.5769 |
[13] |
Xie Heng-Bo, Jiang Yi-Ming, Guo Feng, Liu Ping, Li Jin.Studies on the transport behavior of Ag/TCNQ thin films*. Acta Physica Sinica, 2004, 53(11): 3849-3852.doi:10.7498/aps.53.3849 |
[14] |
Jiang Hong-Wei, Li Ming-Hua, Wang Ai-Ling, Zheng Wu.Exchange coupling in FeMn/NiFe bilayers. Acta Physica Sinica, 2004, 53(4): 1232-1235.doi:10.7498/aps.53.1232 |
[15] |
SHAO JIAN-DA, FAN ZHENG-XIU, YIN GONG-JIE, YI KUI, YUAN LI-XIANG.FABRICATION AND CHARACTERIZATION OF SPUTTERED W/C MULTILAYER MIRROR FOR SOFT X-RAY. Acta Physica Sinica, 1994, 43(12): 2015-2022.doi:10.7498/aps.43.2015 |
[16] |
SHI YI-SHENG, ZHAO TE-XIU, LIU HONG-TU, WANG XIAO-PING.XPS AND AES STUDY FOR Pd/W/Si(lll) BILAYER INTERFACE. Acta Physica Sinica, 1992, 41(11): 1849-1855.doi:10.7498/aps.41.1849 |
[17] |
HOU JIAN-GUO, WU ZI-QIN.APPEARENCE OF FRACTAL REGION IN ANNEALED a-Ge/Au BILAYER THIN FILMS. Acta Physica Sinica, 1988, 37(10): 1735-1740.doi:10.7498/aps.37.1735 |
[18] |
JIANG XIAO-MING, JIANG ZUI-MIN, LIU WEN-HAN, WU ZI-QIN.THE EFFECT OF ANNEALING ON THE X-RAY DIFFRACTION OF W/C PERIODIC MULTILAYERS. Acta Physica Sinica, 1988, 37(11): 1893-1899.doi:10.7498/aps.37.1893 |
[19] |
WANG RUI-LAN, LI HONG-CHENG, GUAN WEI-YAN.DETERMINATION OF SUPERCONDUCTING ENERGY GAP OF HEAVILY DOPED Re THIN FILMS BY ELECTRON TUNNELING. Acta Physica Sinica, 1987, 36(12): 1643-1644.doi:10.7498/aps.36.1643 |
[20] |
ZHANG REN-JI, CHU SHENG-LIN, WU ZI-QIN.CRYSTALLIZATION OF AMORPHOUS Ge IN Ge/Au, Ge/Ag BILAYER FILMS AND Ge-Au, Ge-Ag ALLOY FILMS. Acta Physica Sinica, 1986, 35(3): 365-374.doi:10.7498/aps.35.365 |