[1] |
Wang Dong-Zhi, Zhang Yi-Jun, Li Shi-Man, Tong Ze-Hao, Tang Song, Shi Feng, Jiao Gang-Cheng, Cheng Hong-Chang, Fu Rong-Guo, Qian Yun-Sheng, Zeng Yu-Gang.AlGaAs photocathode with enhanced response at 532 nm. Acta Physica Sinica, 2024, 73(11): 118503.doi:10.7498/aps.73.20240253 |
[2] |
Sun Yong-Feng, Xu Liang, Shen Xian-Chun, Jin Ling, Xu Han-Yang, Cheng Xiao-Xiao, Wang Yu-Hao, Liu Wen-Qing, Liu Jian-Guo.High-order nonlinear response correction method for infrared radiation detector. Acta Physica Sinica, 2021, 70(6): 060701.doi:10.7498/aps.70.20201530 |
[3] |
Wang Ao-Shuang, Xiao Qing-Quan, Chen Hao, He An-Na, Qin Ming-Zhe, Xie Quan.Design and simulation of Mg2Si/Si avalanche photodiode. Acta Physica Sinica, 2021, 70(10): 108501.doi:10.7498/aps.70.20201923 |
[4] |
Chen Jun-Fan, Ren Hui-Zhi, Hou Fu-Hua, Zhou Zhong-Xin, Ren Qian-Shang, Zhang De-Kun, Wei Chang-Chun, Zhang Xiao-Dan, Hou Guo-Fu, Zhao Ying.Passivation optimization and performance improvement of planar a-Si:H/c-Si heterojunction cells in perovskite/silicon tandem solar cells. Acta Physica Sinica, 2019, 68(2): 028101.doi:10.7498/aps.68.20181759 |
[5] |
Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua.Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica, 2015, 64(19): 198801.doi:10.7498/aps.64.198801 |
[6] |
Zhang Yi-Jun, Gan Zhuo-Xin, Zhang Han, Huang Fan, Xu Yuan, Feng Cheng.Recesiation of GaAlAs photocathodes in an ultrahigh vacuum system. Acta Physica Sinica, 2014, 63(17): 178502.doi:10.7498/aps.63.178502 |
[7] |
Zeng Xiang-An, Ai Bin, Deng You-Jun, Shen Hui.Study on light-induced degradation of silicon wafers and solar cells. Acta Physica Sinica, 2014, 63(2): 028803.doi:10.7498/aps.63.028803 |
[8] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Wang Xiao-Hui, Xu Yuan.Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica, 2011, 60(10): 107901.doi:10.7498/aps.60.107901 |
[9] |
Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu.Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector. Acta Physica Sinica, 2010, 59(12): 8903-8909.doi:10.7498/aps.59.8903 |
[10] |
Liu Xiao-Yu, Ma Wen-Quan, Zhang Yan-Hua, Huo Yong-Heng, Chong Ming, Chen Liang-Hui.Two-color quantum well infrared photodetector simultaneously working at 10—14 μm. Acta Physica Sinica, 2010, 59(8): 5720-5723.doi:10.7498/aps.59.5720 |
[11] |
Liu Wen-Bao, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Yang Hui.Abnormal photoabsorption in high resistance GaN epilayer. Acta Physica Sinica, 2010, 59(11): 8048-8051.doi:10.7498/aps.59.8048 |
[12] |
Zhou Chun-Lan, Wang Wen-Jing, Zhao Lei, Li Hai-Ling, Diao Hong-Wei, Cao Xiao-Ning.Preparation and characterization of homogeneity and fine pyramids on the textured single silicon crystal. Acta Physica Sinica, 2010, 59(8): 5777-5783.doi:10.7498/aps.59.5777 |
[13] |
Li Feng, Ma Zhong-Quan, Meng Xia-Jie, Yin Yan-Ting, Yu Zheng-Shan, Lü Peng.Influence of Fe-B pairs on minority carrier lifetime, trapping density and internal quantum efficiency in mono-crystal Si solar cells. Acta Physica Sinica, 2010, 59(6): 4322-4329.doi:10.7498/aps.59.4322 |
[14] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Du Xiao-Qing, Zhang Yi-Jun, Gao Pin, Wang Xiao-Hui, Guo Xiang-Yang, Niu Jun, Gao You-Tang.Study of spectral response characteristics of negative electron affinity GaN photocathode. Acta Physica Sinica, 2010, 59(5): 3577-3582.doi:10.7498/aps.59.3577 |
[15] |
Li Jian-Jun, Zheng Xiao-Bing, Lu Yun-Jun, Zhang-Wei, Xie Ping, Zou Peng.Accurate calibration of the spectral responsivity of silicon trap detectors between 350 and 1064 nm. Acta Physica Sinica, 2009, 58(9): 6273-6278.doi:10.7498/aps.58.6273 |
[16] |
Hu Jian-Min, Wu Yi-Yong, Qian Yong, Yang De-Zhuang, He Shi-Yu.Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell. Acta Physica Sinica, 2009, 58(7): 5051-5056.doi:10.7498/aps.58.5051 |
[17] |
Hu Wei-Da, Yin Fei, Ye Zhen-Hua, Quan Zhi-Jue, Hu Xiao-Ning, Li Zhi-Feng, Chen Xiao-Shuang, Lu Wei.Effects of absorption layer parameters and hetero-interface charge on photoresponse of 12.5 μm long-wavelength HgCdTe photodiode. Acta Physica Sinica, 2009, 58(11): 7891-7896.doi:10.7498/aps.58.7891 |
[18] |
Zhang Wei-Ying, Wu Xiao-Peng, Sun Li-Jie, Lin Bi-Xia, Fu Zhu-Xi.Study on the photovoltaic conversion of ZnO/Si heterojunction. Acta Physica Sinica, 2008, 57(7): 4471-4475.doi:10.7498/aps.57.4471 |
[19] |
Zhou Xu-Chang, Chen Xiao-Shuang, Zhen Hong-Lou, Lu Wei.The effect of distribution of holes in the momentum-space on the photoresponse of p-type quantum well infrared photodetector. Acta Physica Sinica, 2006, 55(8): 4247-4252.doi:10.7498/aps.55.4247 |
[20] |
Yang Wen-Zheng, Hou Xun, Chen Feng, Yang Qing.Experimental study of enhancement of the light-modulated absorption of bacteriorhodopsin-D96N films. Acta Physica Sinica, 2004, 53(1): 296-300.doi:10.7498/aps.53.296 |