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Wu Peng, Zhu Hong-Yu, Wu Jin-Xing, Zhang Tao, Zhang Jin-Cheng, Hao Yue.Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode. Acta Physica Sinica, 2023, 72(17): 178501.doi:10.7498/aps.72.20230709 |
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Wu Peng, Li Ruo-Han, Zhang Tao, Zhang Jin-Cheng, Hao Yue.Interface-state suppression of AlGaN/GaN Schottky barrier diodes with post-anode-annealing treatment. Acta Physica Sinica, 2023, 72(19): 198501.doi:10.7498/aps.72.20230553 |
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Yao Hai-Yun, Yan Xin, Liang Lan-Ju, Yang Mao-Sheng, Yang Qi-Li, Lü Kai-Kai, Yao Jian-Quan.Terahertz dynamic multidimensional modulation at Dirac point based on patterned graphene/gallium nitride hybridized with metasurfaces. Acta Physica Sinica, 2022, 71(6): 068101.doi:10.7498/aps.71.20211845 |
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Wang Hai-Bo, Wan Li-Juan, Fan Min, Yang Jin, Lu Shi-Bin, Zhang Zhong-Xiang.Barrier-tunable gallium oxide Schottky diode. Acta Physica Sinica, 2022, 71(3): 037301.doi:10.7498/aps.71.20211536 |
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Song Jian-Jun, Zhang Long-Qiang, Chen Lei, Zhou Liang, Sun Lei, Lan Jun-Feng, Xi Chu-Hao, Li Jia-Hao.A Ge-based Schottky diode for 2.45 G weak energy microwave wireless energy transmission based on crystal orientation optimization and Sn alloying technology. Acta Physica Sinica, 2021, 70(10): 108401.doi:10.7498/aps.70.20201674 |
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Yuan Ying-Kuo, Guo Wei-Ling, Du Zai-Fa, Qian Feng-Song, Liu Ming, Wang Le, Xu Chen, Yan Qun, Sun Jie.Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode. Acta Physica Sinica, 2021, 70(19): 197801.doi:10.7498/aps.70.20210122 |
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Li Yu-Chen, Chen Hang-Yu, Song Jian-Jun.Ge Schottky diode for improving energy conversion efficiency of the receiver of microwave wireless power transfer. Acta Physica Sinica, 2020, 69(10): 108401.doi:10.7498/aps.69.20191415 |
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Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong.Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement. Acta Physica Sinica, 2018, 67(17): 178501.doi:10.7498/aps.67.20180474 |
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Feng Bo, Deng Biao, Liu Le-Gong, Li Zeng-Cheng, Feng Mei-Xin, Zhao Han-Min, Sun Qian.Effect of plasma surface treatment on embedded n-contact for GaN-based blue light-emitting diodes grown on Si substrate. Acta Physica Sinica, 2017, 66(4): 047801.doi:10.7498/aps.66.047801 |
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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang.Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica, 2017, 66(15): 158501.doi:10.7498/aps.66.158501 |
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Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei.-ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica, 2016, 65(20): 207301.doi:10.7498/aps.65.207301 |
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Zhai Dong-Yuan, Zhao Yi, Cai Yin-Fei, Shi Yi, Zheng You-Dou.Effect of the trench shape on the electrical properties of silicon based trench barrier schottky diode. Acta Physica Sinica, 2014, 63(12): 127201.doi:10.7498/aps.63.127201 |
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Liu Yu-Dong, Du Lei, Sun Peng, Chen Wen-Hao.The effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes. Acta Physica Sinica, 2012, 61(13): 137203.doi:10.7498/aps.61.137203 |
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Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie.A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica, 2011, 60(9): 098107.doi:10.7498/aps.60.098107 |
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Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di.Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica, 2010, 59(2): 1233-1236.doi:10.7498/aps.59.1233 |
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao.Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193.doi:10.7498/aps.58.7189 |
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Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang.The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica, 2008, 57(9): 5869-5874.doi:10.7498/aps.57.5869 |
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
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