The ZnO films were prepared on Si substrates by RF magnetron sputtering and doped with N by ion-implantation. The samples were then annealed at different temperatures, and showed p-type conduction. The properties were examined by scanning electron microscopy(SEM), X-ray diffraction (XRD), and Hall measurement. The results show that the ZnO films have good surface morphology and are highly c-axis oriented. Hall measurement showed that the resistivity and hole concentration were 41.5Ω·cm and 1.68×1016cm-3， respectively. This paper focuses on the discussion and analysis of the influence of the temperature and time of annealing on the p-type transition of the ZnO films.