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Liu Ju, Cao Yi-Wei, Lv Quan-Jiang, Yang Tian-Peng, Mi Ting-Ting, Wang Xiao-Wen, Liu Jun-Lin.Influence of period number of superlattice electron barrier layer on the performance of AlGaN-based deep ultraviolet LED. Acta Physica Sinica, 2024, 73(12): 128503.doi:10.7498/aps.73.20231969 |
[2] |
Li Yan, Chen Xin-Li, Wang Wei-Sheng, Shi Zhi-Wen, Zhu Li-Qiang.Egg shell membrane based electrolyte gated oxide neuromorphic transistor. Acta Physica Sinica, 2023, 72(15): 157302.doi:10.7498/aps.72.20230411 |
[3] |
Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang.Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica, 2023, 72(4): 048503.doi:10.7498/aps.72.20221831 |
[4] |
Li Xue, Cao Bao-Long, Wang Ming-Hao, Feng Zeng-Qin, Chen Shu-Fen.Perovskite light-emitting diode based on combination of modified hole-injection layer and polymer composite emission layer. Acta Physica Sinica, 2021, 70(4): 048502.doi:10.7498/aps.70.20201379 |
[5] |
Wu Jia-Long, Dou Yong-Jiang, Zhang Jian-Feng, Wang Hao-Ran, Yang Xu-Yong.Perovskite light-emitting diodes based on solution-processed metal-doped nickel oxide hole injection layer. Acta Physica Sinica, 2020, 69(1): 018101.doi:10.7498/aps.69.20191269 |
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Gao Cheng-Hao, Xu Feng, Zhang Li, Zhao De-Sheng, Wei Xing, Che Ling-Juan, Zhuang Yong-Zhang, Zhang Bao-Shun, Zhang Jing.Ion implantation isolation based micro-light-emitting diode device array properties. Acta Physica Sinica, 2020, 69(2): 027802.doi:10.7498/aps.69.20191418 |
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Huang Wei, Li Yue-Long, Ren Hui-Zhi, Wang Peng-Yang, Wei Chang-Chun, Hou Guo-Fu, Zhang De-Kun, Xu Sheng-Zhi, Wang Guang-Cai, Zhao Ying, Yuan Ming-Jian, Zhang Xiao-Dan.Perovskite light-emitting diodes based on n-type nanocrystalline silicon oxide electron injection layer. Acta Physica Sinica, 2019, 68(12): 128103.doi:10.7498/aps.68.20190258 |
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Guo Li-Qiang, Tao Jian, Wen Juan, Cheng Guang-Gui, Yuan Ning-Yi, Ding Jian-Ning.Corn starch solid electrolyte gated proton/electron hybrid synaptic transistor. Acta Physica Sinica, 2017, 66(16): 168501.doi:10.7498/aps.66.168501 |
[9] |
Liu Bo-Zhi, Li Rui-Feng, Song Ling-Yun, Hu Lian, Zhang Bing-Po, Chen Yong-Yue, Wu Jian-Zhong, Bi Gang, Wang Miao, Wu Hui-Zhen.QD-LED devices using ZnSnO as an electron-transporting layer. Acta Physica Sinica, 2013, 62(15): 158504.doi:10.7498/aps.62.158504 |
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Liu Bai-Quan, Lan Lin-Feng, Zou Jian-Hua, Peng Jun-Biao.A novel organic light-emitting diode by utilizing double hole injection layer. Acta Physica Sinica, 2013, 62(8): 087302.doi:10.7498/aps.62.087302 |
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Wang Bing, Li Zhi-Cong, Yao Ran, Liang Meng, Yan Fa-Wang, Wang Guo-Hong.Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED. Acta Physica Sinica, 2011, 60(1): 016108.doi:10.7498/aps.60.016108 |
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao.Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193.doi:10.7498/aps.58.7189 |
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Huang Wen-Bo, Zeng Wen-Jin, Wang Li, Peng Jun-Biao.Negative capacitance in polymer light-emitting diodes. Acta Physica Sinica, 2008, 57(9): 5983-5988.doi:10.7498/aps.57.5983 |
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Gu Xiao-Ling, Guo Xia, Wu Di, Li Yi-Bo, Shen Guang-Di.Dependence of properties of GaN-based light emitting diodes on the surface InGaN thickness. Acta Physica Sinica, 2008, 57(2): 1220-1223.doi:10.7498/aps.57.1220 |
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Sun Hui, Zhang Qi-Feng, Wu Jin-Lei.Ultraviolet light emitting diode based on ZnO nanowires. Acta Physica Sinica, 2007, 56(6): 3479-3482.doi:10.7498/aps.56.3479 |
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Zhang Jian-Ming, Zou De-Shu, Liu Si-Nan, Xu Chen, Shen Guang-Di.A novel AlGaInP thin-film light emitting diode with omni directional reflector. Acta Physica Sinica, 2007, 56(5): 2905-2909.doi:10.7498/aps.56.2905 |
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Huang Wen-Bo, Peng Jun-Biao.Carrier injection process of polymer light-emitting diodes. Acta Physica Sinica, 2007, 56(5): 2974-2978.doi:10.7498/aps.56.2974 |
[18] |
Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
[19] |
Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang.Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389.doi:10.7498/aps.55.1384 |
[20] |
Xia Lian-Sheng, Wang Meng, Huang Zi-Ping, Zhang Kai-Zhi, Shi Jin-Shui, Zhang Lin-Wen, Deng Jian-Jun.Explosion of cathode plasma in intense multi-beams electron vacuum diode. Acta Physica Sinica, 2004, 53(10): 3435-3439.doi:10.7498/aps.53.3435 |