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Gou Shi-Long, Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Sheng Jiang-Kun, Xue Yuan-Yuan, Pan Chen.Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environment. Acta Physica Sinica, 2021, 70(15): 156101.doi:10.7498/aps.70.20210351 |
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Zhu Wei-Wei, Zhang Qiu-Ju, Zhang Yan-Hui, Jiao Yang.Motion-induced X-ray and terahertz radiation of electrons captured in laser standing wave. Acta Physica Sinica, 2015, 64(12): 124104.doi:10.7498/aps.64.124104 |
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang.A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica, 2012, 61(6): 067801.doi:10.7498/aps.61.067801 |
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang.A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica, 2012, 61(10): 107803.doi:10.7498/aps.61.107803 |
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Gao Bo, Liu Gang, Wang Li-Xin, Han Zheng-Sheng, Zhang Yan-Fei, Wang Chun-Ling, Wen Jing-Chao.Research on the total dose effects for domestic VDMOS devices used in satellite. Acta Physica Sinica, 2012, 61(17): 176107.doi:10.7498/aps.61.176107 |
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Zhang Fa-Qiang, Wang Zhen, Xu Ze-Ping, Jiang Shi-Lun, V. P. Smirnov, Ning Jia-Min, Li Lin-Bo, Zhou Xiu-Wen, E. V. Grabovsky, G. M. Oleynic, V. V. Alexandrov, Ding Ning, Xu Rong-Kun, Li Zheng-Hong, Yang Jian-Lun.New results of Sino-Russian joint Z-pinch experiments. Acta Physica Sinica, 2011, 60(4): 045208.doi:10.7498/aps.60.045208 |
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Ding Ning, Wu Ji-Ming, Dai Zi-Huan, Zhang Yang, Yin Li, Yao Yan-Zhong, Sun Shun-Kai, Ning Cheng, Shu Xiao-Jian.Numerical simulation analysis of Z-pinch implosion using MARED code. Acta Physica Sinica, 2010, 59(12): 8707-8716.doi:10.7498/aps.59.8707 |
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Chen Wei-Hua, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Zhang Tian-Fu, Zhang Xue.A model considering the ionizing radiation effects in MOS structure. Acta Physica Sinica, 2009, 58(6): 4090-4095.doi:10.7498/aps.58.4090 |
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Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue.Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica, 2008, 57(7): 4487-4491.doi:10.7498/aps.57.4487 |
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Ning Cheng, Ding Ning, Yang Zhen-Hua.Physical analysis of the certain results in Z-pinch experiments on the “Qiang Guang-I” generator. Acta Physica Sinica, 2007, 56(1): 338-345.doi:10.7498/aps.56.338 |
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Li Rui-Min, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin.A 1/f noise based research of radiation induced interface trap buildup process. Acta Physica Sinica, 2007, 56(6): 3400-3406.doi:10.7498/aps.56.3400 |
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Wang Wei, Zhang Jie, Zhao Gang.Simulation of the effects of X-ray emission from accretion disks on the interstellar materials. Acta Physica Sinica, 2006, 55(1): 287-293.doi:10.7498/aps.55.287 |
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Li Zhong-He, Liu Hong-Xia, Hao Yue.Mechanism of NBTI degradation in ultra deep submicron PMOSFET’s. Acta Physica Sinica, 2006, 55(2): 820-824.doi:10.7498/aps.55.820 |
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Zhou Chun-Hong, Zheng You-Dou, Deng Yong-Zhen, Kong Yue-Chan, Chen Peng, Xi Dong-Juan, Gu Shu-Lin, Shen Bo, Zhang Rong, Jiang Ruo-Lian, Han Ping, Shi Yi.Study of interface trap states of AlN-Si(111) heterostructure*. Acta Physica Sinica, 2004, 53(11): 3888-3894.doi:10.7498/aps.53.3888 |
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Ning Cheng, Yang Zhen-Hua, Ding Ning.Numerical studies of neon gas-puff Z-pinch dynamic processes. Acta Physica Sinica, 2003, 52(7): 1650-1655.doi:10.7498/aps.52.1650 |
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Ning Cheng, Yang Zhen-Hua, Ding Ning.Studies on the mechanism of energy transformation in implosion processes of the Z-pinches. Acta Physica Sinica, 2003, 52(2): 415-420.doi:10.7498/aps.52.415 |
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LI ZHI-HONG, GONG YAN-JUN, WU DONG, SUN YU-HAN, WANG JUN, LIU YI, DONG BAO-ZHONG.DETERMINATION OF THE AVERAGE THICKNESS OF INTERFACE LAYER WRAPPED ABOUT SiO2 SOLS BY SAXS. Acta Physica Sinica, 2001, 50(6): 1128-1131.doi:10.7498/aps.50.1128 |
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Zhang Yan, Wang Yu-Tian, Pan Shi-Hong.. Acta Physica Sinica, 1995, 44(7): 1073-1080.doi:10.7498/aps.44.1073 |
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ZHU NAN-CHANG, LI RUN-SHEN, XU SHUN-SHENG.INVESTIGATION OF THE SEMICONDUCTOR STRAINED SUPERLATTICE STRUCTURE AND INTERFACE BY X-RAY ROCKING-CURVE ANALYSIS. Acta Physica Sinica, 1991, 40(3): 433-440.doi:10.7498/aps.40.433 |
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