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Li Tong-Kai, Xu Zheng, Zhao Su-Ling, Xu Xu-Rong, Xue Jun-Ming.Structural and optoelectronic properties of p-type SiO:H films deposited in transition zone. Acta Physica Sinica, 2017, 66(19): 196801.doi:10.7498/aps.66.196801 |
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Guo Shao-Qiang, Hou Qing-Yu, Zhao Chun-Wang, Mao Fei.First principles study of the effect of high V doping on the optical band gap and absorption spectrum of ZnO. Acta Physica Sinica, 2014, 63(10): 107101.doi:10.7498/aps.63.107101 |
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Ma Hai-Lin, Su Qing.Effect of oxygen pressure on structure and optical band gap of gallium oxide thin films prepared by sputtering. Acta Physica Sinica, 2014, 63(11): 116701.doi:10.7498/aps.63.116701 |
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Zong Shuang-Fei, Shen Xiang, Xu Tie-Feng, Chen Yu, Wang Guo-Xiang, Chen Fen, Li Jun, Lin Chang-Gui, Nie Qiu-Hua.Thermal-induced optical changes in the amorphous Ge20Sb15Se65 film. Acta Physica Sinica, 2013, 62(9): 096801.doi:10.7498/aps.62.096801 |
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Luo Xiao-Dong, Di Guo-Qing.Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputtering. Acta Physica Sinica, 2012, 61(20): 206803.doi:10.7498/aps.61.206803 |
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Sun Jie, Nie Qiu-Hua, Wang Guo-Xiang, Wang Xun-Si, Dai Shi-Xun, Zhang Wei, Song Bao-An, Shen Xiang, Xu Tie-Feng.Effect of PbI2 on optical properties of Te-based far infrared transmitting chalcogenide glasses. Acta Physica Sinica, 2011, 60(11): 114212.doi:10.7498/aps.60.114212 |
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Nie Qiu-Hua, Wang Guo-Xiang, Wang Xun-Si, Xu Tie-Feng, Dai Shi-Xun, Shen Xiang.Effect of Ga on optical properties of novel Te-based far infrared transmitting chalcogenide glasses. Acta Physica Sinica, 2010, 59(11): 7949-7955.doi:10.7498/aps.59.7949 |
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Lan Wei, Tang Guo-Mei, Cao Wen-Lei, Liu Xue-Qin, Wang Yin-Yue.Structure and optical properties of Ni-doped ZnO films. Acta Physica Sinica, 2009, 58(12): 8501-8505.doi:10.7498/aps.58.8501 |
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Jia Lu, Xie Er-Qing, Pan Xiao-Jun, Zhang Zhen-Xing.Optical properties of amorphous GaN films deposited by sputtering. Acta Physica Sinica, 2009, 58(5): 3377-3382.doi:10.7498/aps.58.3377 |
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Yang Hang-Sheng, Nie An-Min, Zhang Jian-Ying.Recent progress in cubic boron nitride film synthesis. Acta Physica Sinica, 2009, 58(2): 1364-1370.doi:10.7498/aps.58.1364 |
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Jiang Ai-Hua, Xiao Jian-Rong, Wang De-An.Influence of annealing on structure and optical band gap of nitrogen doping fluorinated amorphous carbon films. Acta Physica Sinica, 2008, 57(9): 6013-6017.doi:10.7498/aps.57.6013 |
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Pan Xiao-Jun, Zhang Zhen-Xing, Wang Tao, Li Hui, Xie Er-Qing.Room temperature visible photoluminescence from nanocrystalline GaN∶Er film prepared by sputtering. Acta Physica Sinica, 2008, 57(6): 3786-3790.doi:10.7498/aps.57.3786 |
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Xu Ying, Diao Hong-Wei, Zhang Shi-Bin, Li Xu-Dong, Zeng Xiang-Bo, Wang Wen-Jing, Liao Xian-Bo.Deposition of p-type nc-SiC：H thin films with subtle carbon incorporation for applications in p-i-n solar cells. Acta Physica Sinica, 2007, 56(5): 2915-2919.doi:10.7498/aps.56.2915 |
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Yang Hang-Sheng, Xie Ying-Jun.Controlling the interfacial structure of cubic boron nitride thin film prepared by plasma-enhanced chemical vapor deposition. Acta Physica Sinica, 2007, 56(9): 5400-5407.doi:10.7498/aps.56.5400 |
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Xiao Jian-Rong, Xu Hui, Guo Ai-Min, Wang Huan-You.Study on FN-DLC thin films: (Ⅱ) effect of radio frequency power on the optical band gap of the thin films. Acta Physica Sinica, 2007, 56(3): 1809-1814.doi:10.7498/aps.56.1809 |
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Xiao Jian-Rong, Xu Hui, Li Yan-Feng, Li Ming-Jun.Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films. Acta Physica Sinica, 2007, 56(7): 4169-4174.doi:10.7498/aps.56.4169 |
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Yang Hang-Sheng.Surface growth mechanism of cubic boron nitride thin films prepared by plasma-enhanced chemical vapor deposition. Acta Physica Sinica, 2006, 55(8): 4238-4246.doi:10.7498/aps.55.4238 |
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.. Acta Physica Sinica, 2002, 51(2): 439-443.doi:10.7498/aps.51.439 |
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Ye Chao, Ning Zhao-Yuan, Cheng Shan-Hua, Wang Xiang-Ying.. Acta Physica Sinica, 2002, 51(11): 2640-2643.doi:10.7498/aps.51.2640 |
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Yang Shen-Dong, Ning Zhao-Yuan, Huang Feng, Cheng Shan-Hua, Ye Chao.. Acta Physica Sinica, 2002, 51(6): 1321-1325.doi:10.7498/aps.51.1321 |
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