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Abstract
Semi-insulating GaAs photoconductive semiconductor switch (PCSS) with withstand voltage of 32 kV and peak current of 3.7 kA has been developed. The breakdown mechanism of the PCSS is analyzed. It is shown that the breakdown of PCSS fabricated from indirect band-gap semiconductors is determined mainly by limited conduction of trap filling, but for PCSS's fabricated from materials that exhibit the transferred-electron effect, such as GaAs, breakdown of the PCSS is caused mainly by the negative-resistance-induced electric field enhancement at the anode boundary. Based on the Gunn effect electronics, the breakdown voltage of the semi-insulating GaAs PCSS is calculated, and the calculated results agree with the experimental results.

Keywords:
photoconducting switch/

breakdown/

transferred-electron effect/

trap filling
Authors and contacts
Shi Wei¹,

Tian Li-Qiang¹,

Wang Xin-Mei¹,

Xu Ming¹,

Ma De-Ming¹,

Zhou Liang-Ji²,

Liu Hong-Wei²,

Xie Wei-Ping²
References

Cited By

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Vol. 58, Issue 2 - 2009-01-20

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