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Song Liu-Qin, Jia Wen-Zhu, Dong Wan, Zhang Yi-Fan, Dai Zhong-Ling, Song Yuan-Hong.Numerical investigation of SiO2film deposition enhanced by capacitively coupled discharge plasma. Acta Physica Sinica, 2022, 71(17): 170201.doi:10.7498/aps.71.20220493 |
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Lu Yang-Dan, Lü Jian-Guo, Yang Ru-Qi, Lu Bo-Jing, Zhu Li-Ping, Ye Zhi-Zhen.Transparent conductive ZnO:Al/Cu mesh composite film and its electric heating performance. Acta Physica Sinica, 2022, 71(18): 187304.doi:10.7498/aps.71.20220529 |
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Cao Yu, Xue Lei, Zhou Jing, Wang Yi-Jun, Ni Jian, Zhang Jian-Jun.Developments of c-Si1-xGex:H thin films as near-infrared absorber for thin film silicon solar cells. Acta Physica Sinica, 2016, 65(14): 146801.doi:10.7498/aps.65.146801 |
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Huang Li-Jing, Ren Nai-Fei, Li Bao-Jia, Zhou Ming.Effects of laser irradiation on the photoelectric properties of thermal-annealed metal/fluorine-doped tin oxide transparent conductive films. Acta Physica Sinica, 2015, 64(3): 034211.doi:10.7498/aps.64.034211 |
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Tan Zai-Shang, Wu Xiao-Meng, Fan Zhong-Yong, Ding Shi-Jin.Effect of thermal annealing on the structure and properties of plasma enhanced chemical vapor deposited SiCOH film. Acta Physica Sinica, 2015, 64(10): 107701.doi:10.7498/aps.64.107701 |
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Chen Ming, Zhou Xi-Ying, Mao Xiu-Juan, Shao Jia-Jia, Yang Guo-Liang.Influence of external magnetic field on properties of aluminum-doped zinc oxide films prepared by RF magnetron sputtering. Acta Physica Sinica, 2014, 63(9): 098103.doi:10.7498/aps.63.098103 |
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He Su-Ming, Dai Shan-Shan, Luo Xiang-Dong, Zhang Bo, Wang Jin-Bin.Preparation of SiON film by plasma enhanced chemical vapor deposition and passivation on Si. Acta Physica Sinica, 2014, 63(12): 128102.doi:10.7498/aps.63.128102 |
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Ding Yan-Li, Zhu Zhi-Li, Gu Jin-Hua, Shi Xin-Wei, Yang Shi-E, Gao Xiao-Yong, Chen Yong-Sheng, Lu Jing-Xiao.Effect of deposition rate on the scaling behavior of microcrystalline silicon films prepared by very high frequency-plasma enhanced chemical vapor deposition. Acta Physica Sinica, 2010, 59(2): 1190-1195.doi:10.7498/aps.59.1190 |
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Zeng Guang-Gen, Li Bing, Zheng Jia-Gui, Wu Li-Li, Zhang Jing-Quan, Lei Zhi, Li Wei, Feng Liang-Huan.Performance of SnO2:F/SnO2 composite film as front-electrode for CdTe solar cells. Acta Physica Sinica, 2010, 59(10): 7437-7441.doi:10.7498/aps.59.7437 |
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Song Jie, Guo Yan-Qing, Wang Xiang, Ding Hong-Lin, Huang Rui.Influence of excitation frequency on the growth properties of nanocrystalline silicon films with high hydrogen dilution. Acta Physica Sinica, 2010, 59(10): 7378-7382.doi:10.7498/aps.59.7378 |
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Yuan He, Sun Chang-Zheng, Xu Jian-Ming, Wu Qing, Xiong Bing, Luo Yi.Design and fabrication of multilayer antireflection coating for optoelectronic devices by plasma enhanced chemical vapor deposition. Acta Physica Sinica, 2010, 59(10): 7239-7244.doi:10.7498/aps.59.7239 |
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Zhang Xiao-Dan, Sun Fu-He, Xu Sheng-Zhi, Wang Guang-Hong, Wei Chang-Chun, Sun Jian, Hou Guo-Fu, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying.Performance optimization of p-i-n type microcrystalline silicon thin films solar cells deposited in single chamber. Acta Physica Sinica, 2010, 59(2): 1344-1348.doi:10.7498/aps.59.1344 |
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Wu Chen-Guo, Shen Jie, Li Dong, Ma Guo-Hong.Terahertz transmission properties of transparent conducting molybdenum-doped ZnO films. Acta Physica Sinica, 2009, 58(12): 8623-8629.doi:10.7498/aps.58.8623 |
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Yang Hang-Sheng.Surface growth mechanism of cubic boron nitride thin films prepared by plasma-enhanced chemical vapor deposition. Acta Physica Sinica, 2006, 55(8): 4238-4246.doi:10.7498/aps.55.4238 |
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Ji Ai-Ling, Ma Li-Bo, Liu Cheng, Wang Yong-Qian.Low temperature fabrication of nanostructured Si-SiOx and Si-SiNx composite films and their photoluminescence features. Acta Physica Sinica, 2004, 53(11): 3818-3822.doi:10.7498/aps.53.3818 |
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Yang Hui-Dong, Wu Chun-Ｙa, Zhao Ying, Xue Jun-Ｍing, Geng Xin-Ｈua, Xiong Shao-Ｚhen.Investigation on the oxygen contamination in the μc-Si∶H thin film deposited b y VHF-PECVD. Acta Physica Sinica, 2003, 52(11): 2865-2869.doi:10.7498/aps.52.2865 |
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Yu Wei, Liu Li-Hui, Hou Hai-Hong, Ding Xue-Cheng, Han Li, Fu Guang-Sheng.Silicon nitride films prepared by helicon wave plasam-enhanced chemical vapour deposition. Acta Physica Sinica, 2003, 52(3): 687-691.doi:10.7498/aps.52.687 |
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Cheng Shan-Hua, Ning Zhao-Yuan, Huang Feng.. Acta Physica Sinica, 2002, 51(3): 668-673.doi:10.7498/aps.51.668 |
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YE CHAO, NING ZHAO-YUAN, CHENG SHAN-HUA, KANG JIAN.STUDY ON α-C∶F FILMS DEPOSITED BY ELECTRON CYCLOTRONRESONANCE PLASMA CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica, 2001, 50(4): 784-789.doi:10.7498/aps.50.784 |
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NING ZHAO-YUAN, CHENG SHAN-HUA, YE CHAO.CHEMICAL BONDING STRUCTURE OF FLUORINATED AMORPHOUS CARBON FILMS PREPARED BY ELECTRON CYCLOTRON RESONANCE PLASMA CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica, 2001, 50(3): 566-571.doi:10.7498/aps.50.566 |
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