[1] |
Zhao Ze-Xian, Xu Meng, Peng Cong, Zhang Han, Chen Long-Long, Zhang Jian-Hua, Li Xi-Feng.Inkjet printing high mobility indium-zinc-tin oxide thin film transistor. Acta Physica Sinica, 2024, 73(12): 128501.doi:10.7498/aps.73.20240361 |
[2] |
Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei.Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2021, 70(21): 217301.doi:10.7498/aps.70.20210700 |
[3] |
Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang.Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer. Acta Physica Sinica, 2017, 66(16): 167301.doi:10.7498/aps.66.167301 |
[4] |
Zhu Yan-Xu, Song Hui-Hui, Wang Yue-Hua, Li Lai-Long, Shi Dong.Design and fabrication of high electron mobility transistor devices with gallium nitride-based. Acta Physica Sinica, 2017, 66(24): 247203.doi:10.7498/aps.66.247203 |
[5] |
Nie Guo-Zheng, Zou Dai-Feng, Zhong Chun-Liang, Xu Ying.Analysis of improved characteristics of pentacene thin-film transistor with an embedded copper oxide layer. Acta Physica Sinica, 2015, 64(22): 228502.doi:10.7498/aps.64.228502 |
[6] |
Zhu Le-Yong, Gao Ya-Na, Zhang Jian-Hua, Li Xi-Feng.High mobility thin-film transistor with solution-processed hafnium-oxide dielectric and zinc-indium-tin-oxide semiconductor. Acta Physica Sinica, 2015, 64(16): 168501.doi:10.7498/aps.64.168501 |
[7] |
Shi Wei-Wei, Li-Wen, Yi Ming-Dong, Xie Ling-Hai, Wei-Wei, Huang Wei.Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modification. Acta Physica Sinica, 2012, 61(22): 228502.doi:10.7498/aps.61.228502 |
[8] |
Jia Quan-Jie, Chen Yu, Tian Xue-Yan, Yao Jiang-Feng, Zhao Su-Ling, Gong Wei, Fan Xing, Xu Zheng, Zhang Fu-Jun.Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors. Acta Physica Sinica, 2011, 60(5): 057201.doi:10.7498/aps.60.057201 |
[9] |
Jia Quan-Jie, Chen Yu, Tian Xue-Yan, Yao Jiang-Feng, Zhao Su-Ling, Fan Xing, Gong Wei, Xu Zheng, Zhang Fu-Jun.Crystallization and microstructure change of semiconductor active thin layer in polymer organic field-effect transistors. Acta Physica Sinica, 2011, 60(2): 027201.doi:10.7498/aps.60.027201 |
[10] |
Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming.Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202.doi:10.7498/aps.60.017202 |
[11] |
Wang Xiong, Cai Xi-Kun, Yuan Zi-Jian, Zhu Xia-Ming, Qiu Dong-Jiang, Wu Hui-Zhen.Study of zinc tin oxide thin-film transistor. Acta Physica Sinica, 2011, 60(3): 037305.doi:10.7498/aps.60.037305 |
[12] |
, Zhao Su-Ling, Xu Zheng, Yao Jiang-Feng, Zhang Fu-Jun, Tian Xue-Yan.Non-solvent addition induced self-organization for enhancement of performance of poly(3-hexylthiophene) organic field-effect transistors. Acta Physica Sinica, 2011, 60(3): 037201.doi:10.7498/aps.60.037201 |
[13] |
Xu Tian-Ning, Wu Hui-Zhen, Zhang Ying-Ying, Wang Xiong, Zhu Xia-Ming, Yuan Zi-Jian.Fabrication and performance of indium oxide based transparent thin film transistors. Acta Physica Sinica, 2010, 59(7): 5018-5022.doi:10.7498/aps.59.5018 |
[14] |
Zou Jian-Hua, Lan Lin-Feng, Xu Rui-Xia, Yang Wei, Peng Jun-Biao.Integration of organic thin-film transistor and polymer light-emitting diodes. Acta Physica Sinica, 2010, 59(2): 1275-1281.doi:10.7498/aps.59.1275 |
[15] |
Liu Yu-Rong, Chen Wei, Liao Rong.Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene). Acta Physica Sinica, 2010, 59(11): 8088-8092.doi:10.7498/aps.59.8088 |
[16] |
Chen Yue-Ning, Xu Zheng, Zhao Su-Ling, Sun Qin-Jun, Yin Fei-Fei, Dong Yu-Hang.Research on least-squares fitting calculation of the field-effect mobility. Acta Physica Sinica, 2010, 59(11): 8113-8117.doi:10.7498/aps.59.8113 |
[17] |
Sun Qin-Jun, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Gao Li-Yan, Tian Xue-Yan, Wang Yong-Sheng.Contact effect in organic thin film transistors. Acta Physica Sinica, 2010, 59(11): 8125-8130.doi:10.7498/aps.59.8125 |
[18] |
Liu Yu-Rong, Wang Zhi-Xin, Yu Jia-Le, Xu Hai-Hong.High mobility polymer thin-film transistors. Acta Physica Sinica, 2009, 58(12): 8566-8570.doi:10.7498/aps.58.8566 |
[19] |
Yuan Guang-Cai, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Jiang Wei-Wei, Huang Jin-Zhao, Song Dan-Dan, Zhu Hai-Na, Huang Jin-Ying, Xu Xu-Rong.Study of the characteristics of organic thin film transistors based on different active layers of pentacene and CuPc thin films. Acta Physica Sinica, 2008, 57(9): 5911-5917.doi:10.7498/aps.57.5911 |
[20] |
Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia.Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica, 2003, 52(4): 830-833.doi:10.7498/aps.52.830 |