[1] |
Li Yuan-He, Zhuo Zhi-Yao, Wang Jian, Huang Jun-Hui, Li Shu-Lun, Ni Hai-Qiao, Niu Zhi-Chuan, Dou Xiu-Ming, Sun Bao-Quan.Controlling exciton spontaneous emission of quantum dots by Au nanoparticles. Acta Physica Sinica, 2022, 71(6): 067804.doi:10.7498/aps.71.20211863 |
[2] |
Li Wei, Fu Jing, Yang Yun-Yun, He Ji-Zhou.Quantum dot refrigerator driven by photon. Acta Physica Sinica, 2019, 68(22): 220501.doi:10.7498/aps.68.20191091 |
[3] |
Zhou Liang-Liang, Wu Hong-Bo, Li Xue-Ming, Tang Li-Bin, Guo Wei, Liang Jing.ZrS2quantum dots: Preparation, structure, and optical properties. Acta Physica Sinica, 2019, 68(14): 148501.doi:10.7498/aps.68.20190680 |
[4] |
Liang Yu-Hong, Li Hong-Juan, Yin Ji-Wen.Intraband relaxation process in PbSe quantum dot studied by lattice relaxation method. Acta Physica Sinica, 2019, 68(12): 127301.doi:10.7498/aps.68.20190187 |
[5] |
He Yue-Di, Xu Zheng, Zhao Su-Ling, Liu Zhi-Min, Gao Song, Xu Xu-Rong.Electroluminescent energy transfer of hybrid quantum dotsdevice. Acta Physica Sinica, 2014, 63(17): 177301.doi:10.7498/aps.63.177301 |
[6] |
Liu Zhi-Min, Zhao Su-Ling, Xu Zheng, Gao Song, Yang Yi-Fan.Luminescence characteristics of PVK doped with red-emitting quantum dots. Acta Physica Sinica, 2014, 63(9): 097302.doi:10.7498/aps.63.097302 |
[7] |
Zhang Pan-Jun, Sun Hui-Qing, Guo Zhi-You, Wang Du-Yang, Xie Xiao-Yu, Cai Jin-Xin, Zheng Huan, Xie Nan, Yang Bin.The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells. Acta Physica Sinica, 2013, 62(11): 117304.doi:10.7498/aps.62.117304 |
[8] |
Ye Ying, Zhou Wang-Min.Influences of growth orientation on strain and strain relaxation of quantum dots. Acta Physica Sinica, 2013, 62(5): 058105.doi:10.7498/aps.62.058105 |
[9] |
Wang Qi-Wen, Hong Lan.Polaron spin relaxation in a two-dimensional quantum dot. Acta Physica Sinica, 2012, 61(1): 017107.doi:10.7498/aps.61.017107 |
[10] |
Ju Xin, Guo Jian-Hong.Influence of interdot-coupling on differentialconductance for a triple quantum dot. Acta Physica Sinica, 2011, 60(5): 057302.doi:10.7498/aps.60.057302 |
[11] |
Feng Hao, Yu Zhong-Yuan, Liu Yu-Min, Lu Peng-Fei, Jia Bo-Yong, Yao Wen-Jie, Tian Hong-Da, Zhao Wei, Xu Zi-Huan.Theoretical study on strain compensation layer for growth of quantum dots. Acta Physica Sinica, 2010, 59(2): 765-770.doi:10.7498/aps.59.765 |
[12] |
Yin Ji-Wen, Xiao Jing-Lin, Yu Yi-Fu, Wang Zi-Wu.The effect of Coulomb potential to the decoherence of the parabolic quantum dot qubit. Acta Physica Sinica, 2008, 57(5): 2695-2698.doi:10.7498/aps.57.2695 |
[13] |
Cai Cheng-Yu, Zhou Wang-Min.The strain distribution and equilibrium morphology of Ge/Si semiconductor quantum dot. Acta Physica Sinica, 2007, 56(8): 4841-4846.doi:10.7498/aps.56.4841 |
[14] |
Peng Hong-Ling, Han Qin, Yang Xiao-Hong, Niu Zhi-Chuan.Modulation response analysis of 1.3 μm quantum dot vertical-cavity surface-emitting lasers. Acta Physica Sinica, 2007, 56(2): 863-870.doi:10.7498/aps.56.863 |
[15] |
Zheng Rui-Lun.Energy of excitons and probability distribution of electrons in columned composite system composed of quantum dots and quantum wires. Acta Physica Sinica, 2007, 56(8): 4901-4907.doi:10.7498/aps.56.4901 |
[16] |
Cheng Cheng, Zhang Hang.A semiconductor nanocrystal PbSe quantum dot fiber amplifier. Acta Physica Sinica, 2006, 55(8): 4139-4144.doi:10.7498/aps.55.4139 |
[17] |
Liu Shi-Rong, Huang Wei-Qi, Qin Zhao-Jian.Germanium quantum dots formed by oxidation of SiGe alloys. Acta Physica Sinica, 2006, 55(5): 2488-2491.doi:10.7498/aps.55.2488 |
[18] |
Deng Yu-Xiang, Yan Xiao-Hong, Tang Na-Si.Electron transport through a quantum dot ring. Acta Physica Sinica, 2006, 55(4): 2027-2032.doi:10.7498/aps.55.2027 |
[19] |
Hou Chun-Feng, Guo Ru-Hai.Energy structures of the elliptic cylindrical quantum dots. Acta Physica Sinica, 2005, 54(5): 1972-1976.doi:10.7498/aps.54.1972 |
[20] |
Zhou Hui-Jun, Cheng Mu-Tian, Liu Shao-Ding, Wang Qu-Quan, Zhan Ming-Sheng, Xue Qi-Kun.High polarization properties of single-photon emission from anisotropic InGaAs quantum dots. Acta Physica Sinica, 2005, 54(9): 4141-4145.doi:10.7498/aps.54.4141 |