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Li Yuan, Deng Han-Bin, Wang Cui-Xiang, Li Shuai-Shuai, Liu Li-Min, Zhu Chang-Jiang, Jia Ke, Sun Ying-Kai, Du Xin, Yu Xin, Guan Tong, Wu Rui, Zhang Shu-Yuan, Shi You-Guo, Mao Han-Qing.Surface and electronic structure of antiferromagnetic axion insulator candidate EuIn2As2. Acta Physica Sinica, 2021, 70(18): 186801.doi:10.7498/aps.70.20210783 |
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Zhang Ma-Lin, Ge Jian-Feng, Duan Ming-Chao, Yao Gang, Liu Zhi-Long, Guan Dan-Dan, Li Yao-Yi, Qian Dong, Liu Can-Hua, Jia Jin-Feng.Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001). Acta Physica Sinica, 2016, 65(12): 127401.doi:10.7498/aps.65.127401 |
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Zhou Xun, Luo Zi-Jiang, Wang Ji-Hong, Guo Xiang, Ding Zhao.Effect of low As pressure annealing on the morphology and reconstruction of GaAs (001). Acta Physica Sinica, 2015, 64(21): 216803.doi:10.7498/aps.64.216803 |
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Wu Jian-Bang, Zhou Min-Jie, Wang Xue-Min, Wang Yu-Ying, Xiong Zheng-Wei, Cheng Xin-Lu, Marie-José Casanove, Christophe Gatel, Wu Wei-Dong.Epitaxial growth micro-structure and magnetic studies of FePt nanoparticles:MgO multi-layer composite thin films. Acta Physica Sinica, 2014, 63(16): 166801.doi:10.7498/aps.63.166801 |
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Wei Wen-Zhe, Guo Xiang, Liu Ke, Wang Yi, Luo Zi-Jiang, Zhou Qing, Wang Ji-Hong, Ding Zhao.Thermodynamic study on two-step desorption of oxides on InAs(001) surface. Acta Physica Sinica, 2013, 62(22): 226801.doi:10.7498/aps.62.226801 |
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Yang Yong-Fu, Fu Rong-Guo, Ma Li, Wang Xiao-Hui, Zhang Yi-Jun.Effect of surface potential barrier on quantum efficiency decay of reflection-mode GaN photocathode. Acta Physica Sinica, 2012, 61(12): 128504.doi:10.7498/aps.61.128504 |
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Weng Yong-Chao, Kuang Long-Yu, Gao Nan, Cao Lei-Feng, Zhu Xiao-Li, Wang Xiao-Hua, Xie Chang-Qing.Reflection type single-order diffraction grating. Acta Physica Sinica, 2012, 61(15): 154203.doi:10.7498/aps.61.154203 |
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Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi.Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy. Acta Physica Sinica, 2012, 61(23): 237804.doi:10.7498/aps.61.237804 |
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Ding Zhao, Wei Jun, Yang Zai-Rong, Luo Zi-Jiang, He Ye-Quan, Zhou Xun, He Hao, Deng Chao-Yong.Study on temperature calibration and surface phase transition of GaAs crystal substrate in MBE growth by RHEED real-time monitoring. Acta Physica Sinica, 2011, 60(1): 016109.doi:10.7498/aps.60.016109 |
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Wei Xian-Hua, Zhang Ying, Li Jin-Long, Deng Xin-Wu, Liu Xing-Zhao, Jiang Shu-Wen, Zhu Jun, Li Yan-Rong.Analysis of reflection high-energy electron diffraction pattern during SrTiO3 homoepitaxy. Acta Physica Sinica, 2005, 54(1): 217-220.doi:10.7498/aps.54.217 |
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Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun, Li Yong-Hua, Liu Feng-Qin, K. Yibulaxin.Photoelectron diffraction study on the polarity of GaN surface. Acta Physica Sinica, 2004, 53(4): 1171-1176.doi:10.7498/aps.53.1171 |
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Jiang Jin-Long, Li Wen-Jie, Zhou Li, Zhao Ru-Guang, Yang Wei-Sheng.Investigation of stable high-index silicon surfacesby means of LEED pattern analysis. Acta Physica Sinica, 2003, 52(1): 156-162.doi:10.7498/aps.52.156 |
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Chen Ying-Fei, Peng Wei, Li Jie, Chen Ke, Zhu Xiao-Hong, Wang Ping, Zeng Guang, Zheng Dong-Ning, Li Lin.In-situ monitoring of the growth of oxide thin films in PLD using high-pressure reflection high energy electron diffraction. Acta Physica Sinica, 2003, 52(10): 2601-2606.doi:10.7498/aps.52.2601 |
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HU XIAO-MING, LIN ZHANG-DA.HYDROGEN ADSORPTION INDUCED PHASE TRANSITIONS ON Si(100) STUDIED BY LEED. Acta Physica Sinica, 1996, 45(6): 985-989.doi:10.7498/aps.45.985 |
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GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING.Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica, 1996, 45(4): 647-654.doi:10.7498/aps.45.647 |
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XING YI-RONG, WU JI-AN, ZHANG JING-WNG, LIU CHI-ZI, WANG CHANG-HENG.A LEED STUDY OF ATOMIC STRUCTURE ON Si(113) SURFACE. Acta Physica Sinica, 1992, 41(11): 1806-1812.doi:10.7498/aps.41.1806 |
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CHEN KE-MING, JIN GAO-LONG, SHENG CHI, ZHOU GAO-LIANG, JIANO WEI-DONG, ZHANG XIANG-JIU, YU MING-REN.RHEED INTENSITY OSCILLATIONS IN THE PROCESS OF MOLECULAR BEAM EPITAXY GROWTH OF Ge AND Si ON Si SUBSTRATES. Acta Physica Sinica, 1990, 39(2): 237-244.doi:10.7498/aps.39.237 |
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CHEN KE-MING, ZHOU TIE-CHENG, FAN YONG-LIANG, SHENG CHI, YU MING-REN.THE EFFECT OF ELECTRON DIFFRACTION CONDITIONS ON RHEED INTENSITY OSCILLATIONS DURING Si(111) MBE. Acta Physica Sinica, 1990, 39(12): 1937-1944.doi:10.7498/aps.39.1937 |
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LAN TIAN, XU FEI-YUE.A STUDY OF GaAs(110) SURFACE RELAXATION WITH LOW-ENERGY-ELECTRON-DIFFRACTION. Acta Physica Sinica, 1989, 38(3): 357-365.doi:10.7498/aps.38.357 |
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LAN TIAN, XU FEI-YUE.SURFACE ATOMIC STRUCTURE OF THE Si (111) 7×7 SURFACE STUDIED BY LOW-ENERGY ELECTRON DIFFRACTION. Acta Physica Sinica, 1989, 38(7): 1077-1085.doi:10.7498/aps.38.1077 |