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Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming.Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica, 2016, 65(1): 018501.doi:10.7498/aps.65.018501 |
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Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao.Two-dimensional model of symmetrical double-gate strained Si single Halo metal-oxide semiconductor field effect transistor with gate stack dielectric. Acta Physica Sinica, 2014, 63(24): 248502.doi:10.7498/aps.63.248502 |
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Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin.Study on intrinsic carrier concentration of direct bandgap Ge1-xSnx. Acta Physica Sinica, 2014, 63(23): 238502.doi:10.7498/aps.63.238502 |
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Jin Zhao, Qiao Li-Ping, Guo Chen, Wang Jiang-An, Richard C. Liu.Electronic conductivity effective masses along arbitrary directional channel in uniaxial strained Si(001). Acta Physica Sinica, 2013, 62(5): 058501.doi:10.7498/aps.62.058501 |
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing.Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2013, 62(10): 108501.doi:10.7498/aps.62.108501 |
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing.Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric Halo. Acta Physica Sinica, 2013, 62(15): 158502.doi:10.7498/aps.62.158502 |
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Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan.Anisotropy and isotropy of hole effective mass of strained Ge. Acta Physica Sinica, 2012, 61(23): 237102.doi:10.7498/aps.61.237102 |
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Wang Cheng, Wang Guan-Yu, Zhang He-Ming, Song Jian-Jun, Yang Chen-Dong, Mao Yi-Fei, Li Yong-Mao, Hu Hui-Yong, Xuan Rong-Xi.Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si. Acta Physica Sinica, 2012, 61(4): 047203.doi:10.7498/aps.61.047203 |
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Wang Xiao-Yan, Wang Guan-Yu.Hole scattering mechanism in tetragonal strained Si. Acta Physica Sinica, 2012, 61(5): 057304.doi:10.7498/aps.61.057304 |
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Hu Hui-Yong, Lei Shuai, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin, Wang Bin.Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate. Acta Physica Sinica, 2012, 61(10): 107301.doi:10.7498/aps.61.107301 |
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Wang Guan-Yu, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Ma Jian-Li, Wang Xiao-Yan.Analytical dispersion relation model for conduction band of uniaxial strained Si. Acta Physica Sinica, 2012, 61(9): 097103.doi:10.7498/aps.61.097103 |
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Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Xuan Rong-Xi, Hu Hui-Yong, Wang Guan-Yu.Densities of states of strained Si in different crystal systems. Acta Physica Sinica, 2011, 60(4): 047106.doi:10.7498/aps.60.047106 |
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Wang Guan-Yu, Ma Jian-Li, Zhang He-Ming, Wang Xiao-Yan, Wang Bin.Model of intrinsic carrier concentrationof [110]/(001)-uniaxial strained Si. Acta Physica Sinica, 2011, 60(7): 077105.doi:10.7498/aps.60.077105 |
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Model of hole effective mass of strained Si1－xGex/(111)Si. Acta Physica Sinica, 2010, 59(1): 579-582.doi:10.7498/aps.59.579 |
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Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo.Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric. Acta Physica Sinica, 2010, 59(11): 8131-8136.doi:10.7498/aps.59.8131 |
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Zhao Li-Xia, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi.Model of electronical conductivity effective mass of strained Si. Acta Physica Sinica, 2010, 59(9): 6545-6548.doi:10.7498/aps.59.6545 |
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Song Jian-Jun, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Dai Xian-Ying.Anisotropy of hole effective mass of strained Si/(001)Si1-xGex. Acta Physica Sinica, 2009, 58(7): 4958-4961.doi:10.7498/aps.58.4958 |
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Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi.Dispersion relation model of valence band in strained Si. Acta Physica Sinica, 2008, 57(11): 7228-7232.doi:10.7498/aps.57.7228 |
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ZHANG RUI-QIN, DAI GUO-CAI, GUAN DA-REN, CAI ZHENG-TING.GAP STATES DUE TO INTRINSIC DEFECTS IN a-Si:H. Acta Physica Sinica, 1989, 38(1): 163-169.doi:10.7498/aps.38.163 |
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ZHANG HONG-TU, ZHAO XIAO-PENG.ELLIPTIC INCLUSIONS WITH LINEAR EIGEN STRAINS. Acta Physica Sinica, 1983, 32(5): 582-592.doi:10.7498/aps.32.582 |
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