[1] |
Liu Huan, Li Gong-Ping, Xu Nan-Nan, Lin Qiao-Lu, Yang Lei, Wang Cang-Long.A simulation study of structural and optical properties in Cu ions implantation single-crystal rutile. Acta Physica Sinica, 2016, 65(20): 206102.doi:10.7498/aps.65.206102 |
[2] |
Gao Tan-Hua, Liu Hui-Ying, Zhang Peng, Wu Shun-Qing, Yang Yong, Zhu Zi-Zhong.Structural and electronic properties of Al-doped spinel LiMn2O4. Acta Physica Sinica, 2012, 61(18): 187306.doi:10.7498/aps.61.187306 |
[3] |
Chen Dong, Xiao He-Yang, Jia Wei, Chen Hong, Zhou He-Gen, Li Yi, Ding Kai-Ning, Zhang Yong-Fan.Electronic structures and optical properties of AAl2C4 (A=Zn, Cd, Hg; C=S, Se) semiconductors. Acta Physica Sinica, 2012, 61(12): 127103.doi:10.7498/aps.61.127103 |
[4] |
Gong Li, Feng Xiang-Yang, Lu Yao, Zhang Chang-Wen, Wang Pei-Ji.The investigation on effect of property of ZnO photoelectric material by Ta-doping. Acta Physica Sinica, 2012, 61(9): 097101.doi:10.7498/aps.61.097101 |
[5] |
Lu Yao, Wang Pei-Ji, Zhang Chang-Wen, Feng Xian-Yang, Jiang Lei, Zhang Guo-Lian.Study of material properties of Fe, S Co-doped SnO2 by first principles. Acta Physica Sinica, 2012, 61(2): 023101.doi:10.7498/aps.61.023101 |
[6] |
Yao Guang-Rui, Fan Guang-Han, Zheng Shu-Wen, Ma Jia-Hong, Chen Jun, Zhang Yong, Li Shu-Ti, Su Shi-Chen, Zhang Tao.First-principles study of p-type ZnO by Te-N codoping. Acta Physica Sinica, 2012, 61(17): 176105.doi:10.7498/aps.61.176105 |
[7] |
Ma Xiao-Feng, Wang Yi-Zhe, Zhou Cheng-Yue.Structural and optical properties of a-Si ∶H/SiO2 multiple quantum wells. Acta Physica Sinica, 2011, 60(6): 068102.doi:10.7498/aps.60.068102 |
[8] |
Lin Qi, Chen Yu-Hang, Wu Jian-Bao, Kong Zong-Min.Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons. Acta Physica Sinica, 2011, 60(9): 097103.doi:10.7498/aps.60.097103 |
[9] |
Lu Yao, Wang Pei-Ji, Zhang Chang-Wen, Jiang Lei, Zhang Guo-Lian, Song Peng.Material opto-electronic properties of In, N co-doped SnO2 studied by first principles. Acta Physica Sinica, 2011, 60(6): 063103.doi:10.7498/aps.60.063103 |
[10] |
Yu Feng, Wang Pei-Ji, Zhang Chang-Wen.Electronic structure and optical properties of Al-doped SnO2. Acta Physica Sinica, 2011, 60(2): 023101.doi:10.7498/aps.60.023101 |
[11] |
Tan Xing-Yi, Jin Ke-Xin, Chen Chang-Le, Zhou Chao-Chao.Electronic structure of YFe2B2by first-principles calculation. Acta Physica Sinica, 2010, 59(5): 3414-3417.doi:10.7498/aps.59.3414 |
[12] |
Deng Bei, Sun Hui-Qing, Guo Zhi-You, Gao Xiao-Qi.Theoretical analysis on the improvement of p-type ZnO by B-N codoping. Acta Physica Sinica, 2010, 59(2): 1212-1218.doi:10.7498/aps.59.1212 |
[13] |
Wang Wei, Sun Jia-Fa, Liu Mei, Liu Su.First-principles calculations on the electronic band structure of β-Pyrochlore superconductors AOs2O6 (A=K,Rb,Cs). Acta Physica Sinica, 2009, 58(8): 5632-5639.doi:10.7498/aps.58.5632 |
[14] |
Dang Sui-Hu, Li Chun-Xia, Han Pei-De.First-principles calculation of CdS electronic structure doped with Mg and Cu. Acta Physica Sinica, 2009, 58(6): 4137-4143.doi:10.7498/aps.58.4137 |
[15] |
Guan Li, Liu Bao-Ting, Li Xu, Zhao Qing-Xun, Wang Ying-Long, Guo Jian-Xin, Wang Shu-Biao.Electronic structure and optical properties of fluorite-structure TiO2. Acta Physica Sinica, 2008, 57(1): 482-487.doi:10.7498/aps.57.482 |
[16] |
.Simulative calculation of electronic structure of F-doped SnO2. Acta Physica Sinica, 2007, 56(12): 7195-7200.doi:10.7498/aps.56.7195 |
[17] |
Ding Shao-Feng, Fan Guang-Han, Li Shu-Ti, Xiao Bing.First-principles study of the p-type doped InN. Acta Physica Sinica, 2007, 56(7): 4062-4067.doi:10.7498/aps.56.4062 |
[18] |
Chen De-Yan, Lü Tie-Yu, Huang Mei-Chun.GW quasiparticle band structure of BaSe. Acta Physica Sinica, 2006, 55(7): 3597-3600.doi:10.7498/aps.55.3597 |
[19] |
Pan Hong-Zhe, Xu Ming, Zhu Wen-Jun, Zhou Hai-Ping.First-principles study on the electrical structures and optical properties of β-Si3N4. Acta Physica Sinica, 2006, 55(7): 3585-3589.doi:10.7498/aps.55.3585 |
[20] |
Pan Zhi-Jun, Zhang Lan-Ting, Wu Jian-Sheng.A first-principle study of electronic and geometrical structures of semiconducting β-FeSi2 with doping. Acta Physica Sinica, 2005, 54(11): 5308-5313.doi:10.7498/aps.54.5308 |