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Liu Qing-Bin, Yu Cui, Guo Jian-Chao, Ma Meng-Yu, He Ze-Zhao, Zhou Chuang-Jie, Gao Xue-Dong, Yu Hao, Feng Zhi-Hong.Influence of polycrystalline diamond on silicon-based GaN material. Acta Physica Sinica, 2023, 72(9): 098104.doi:10.7498/aps.72.20221942 |
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Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang.Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica, 2023, 72(4): 048503.doi:10.7498/aps.72.20221831 |
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Lei Zhen-Shuai, Sun Xiao-Wei, Liu Zi-Jiang, Song Ting, Tian Jun-Hong.Phase diagram prediction and high pressure melting characteristics of GaN. Acta Physica Sinica, 2022, 71(19): 198102.doi:10.7498/aps.71.20220510 |
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Yuan Ying-Kuo, Guo Wei-Ling, Du Zai-Fa, Qian Feng-Song, Liu Ming, Wang Le, Xu Chen, Yan Qun, Sun Jie.Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode. Acta Physica Sinica, 2021, 70(19): 197801.doi:10.7498/aps.70.20210122 |
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Xie Fei, Zang Hang, Liu Fang, He Huan, Liao Wen-Long, Huang Yu.Simulated research on displacement damage of gallium nitride radiated by different neutron sources. Acta Physica Sinica, 2020, 69(19): 192401.doi:10.7498/aps.69.20200064 |
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Huang Wei, Li Yue-Long, Ren Hui-Zhi, Wang Peng-Yang, Wei Chang-Chun, Hou Guo-Fu, Zhang De-Kun, Xu Sheng-Zhi, Wang Guang-Cai, Zhao Ying, Yuan Ming-Jian, Zhang Xiao-Dan.Perovskite light-emitting diodes based on n-type nanocrystalline silicon oxide electron injection layer. Acta Physica Sinica, 2019, 68(12): 128103.doi:10.7498/aps.68.20190258 |
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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang.Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica, 2017, 66(15): 158501.doi:10.7498/aps.66.158501 |
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Feng Bo, Deng Biao, Liu Le-Gong, Li Zeng-Cheng, Feng Mei-Xin, Zhao Han-Min, Sun Qian.Effect of plasma surface treatment on embedded n-contact for GaN-based blue light-emitting diodes grown on Si substrate. Acta Physica Sinica, 2017, 66(4): 047801.doi:10.7498/aps.66.047801 |
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Wang Guang-Xu, Chen Peng, Liu Jun-Lin, Wu Xiao-Ming, Mo Chun-Lan, Quan Zhi-Jue, Jiang Feng-Yi.Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate. Acta Physica Sinica, 2016, 65(8): 088501.doi:10.7498/aps.65.088501 |
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Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate. Acta Physica Sinica, 2015, 64(17): 177804.doi:10.7498/aps.64.177804 |
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Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica, 2015, 64(18): 187801.doi:10.7498/aps.64.187801 |
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi.Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801.doi:10.7498/aps.64.107801 |
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Chen Huan-Ting, Lü Yi-Jun, Gao Yu-Lin, Chen Zhong, Zhuang Rong-Rong, Zhou Xiao-Fang, Zhou Hai-Guang.The physical characteristic study on luminance uniformity and temperature for power GaN LEDs chip. Acta Physica Sinica, 2012, 61(16): 167104.doi:10.7498/aps.61.167104 |
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Gao Hui, Kong Fan-Min, Li Kang, Chen Xin-Lian, Ding Qing-An, Sun Jing.Structural optimization of GaN blue light LED with double layers of photonic crystals. Acta Physica Sinica, 2012, 61(12): 127807.doi:10.7498/aps.61.127807 |
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Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi.Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica, 2011, 60(7): 078503.doi:10.7498/aps.60.078503 |
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Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao.Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica, 2010, 59(2): 1268-1274.doi:10.7498/aps.59.1268 |
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Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di.Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica, 2010, 59(2): 1233-1236.doi:10.7498/aps.59.1233 |
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao.Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193.doi:10.7498/aps.58.7189 |
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Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling.Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2008, 57(1): 472-476.doi:10.7498/aps.57.472 |
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
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