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Abstract

In this paper, N-type Bi2Te3 and p-type Sb2Te3 thermoelectric thin films are deposited by ion beam sputtering with Bi/Te and Sb/Te binary compound target. Sb2Te3 thin films and Bi2Te3 thin films are annealed at different annealing temperatures for 1 h and their thermoelectric properties are characterized. When the annealing temperature is 150 ℃, both the Seebeck coefficient and power factor of the Bi2Te3 thin films have maximal values of -148 μVK-1 and 0.893×10-3 Wm-1K-2 respectively. Sb2Te3 thermoelectric thin film has a seebeck coefficient of 117 μVK-1 and a maximal power factor of 0.797×10-3 Wm-1K-2 when the annealing temperature is 200 ℃. Therefore, Sb2Te3 thin films at the annealing temperature of 200 oC and Bi2Te3 thin films at the annealing temperature of 150 ℃ are selected to fabricate the single thin film thermoelectric generation. When the temperature difference between the cold side and the heat side is 50K, the output voltage of the single thin film thermoelectric generation is 15.26 mV and the maximal output power is 0.129 μW.

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Vol. 60, Issue 9 - 2011-05-05

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