[1] |
Dong Dian-Meng, Wang Cheng, Zhang Qing-Yi, Zhang Tao, Yang Yong-Tao, Xia Han-Chi, Wang Yue-Hui, Wu Zhen-Ping.Ga2O3-based metal-insulator-semiconductor solar-blind ultraviolet photodetector with HfO2inserting layer. Acta Physica Sinica, 2023, 72(9): 097302.doi:10.7498/aps.72.20222222 |
[2] |
Kang Ya-Bin, Yuan Xiao-Peng, Wang Xiao-Bo, Li Ke-Wei, Gong Dian-Qing, Cheng Xu-Dong.Microstructure building and thermal stability of cermet-based photothermal conversion coatings with layered structures. Acta Physica Sinica, 2023, 72(5): 057103.doi:10.7498/aps.72.20221693 |
[3] |
Tang Yan-Hao.Exotic states in moiré superlattices of twisted semiconducting transition metal dichalcogenides. Acta Physica Sinica, 2023, 72(2): 027802.doi:10.7498/aps.72.20222080 |
[4] |
Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin.First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica, 2022, 71(5): 058102.doi:10.7498/aps.71.20211796 |
[5] |
.First Principle Study on Modulating of Schottky Barrier at Metal/4H-SiC Interface by Graphene Intercalation. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211796 |
[6] |
Li Wei-Sheng, Zhou Jian, Wang Han-Chen, Wang Shu-Xian, Yu Zhi-Hao, Li Song-Lin, Shi Yi, Wang Xin-Ran.Logical integration device for two-dimensional semiconductor transition metal sulfide. Acta Physica Sinica, 2017, 66(21): 218503.doi:10.7498/aps.66.218503 |
[7] |
Tao Qiang, Ma Shuai-Ling, Cui Tian, Zhu Pin-Wen.Structures and properties of functional transition metal borides. Acta Physica Sinica, 2017, 66(3): 036103.doi:10.7498/aps.66.036103 |
[8] |
Lu Zhi-Peng, Zhu Wen-Jun, Lu Tie-Cheng, Meng Chuan-Min, Xu Liang, Li Xu-Hai.Structural phase transition of Ru at high pressure and temperature. Acta Physica Sinica, 2013, 62(17): 176402.doi:10.7498/aps.62.176402 |
[9] |
Le Ling-Cong, Ma Xin-Guo, Tang Hao, Wang Yang, Li Xiang, Jiang Jian-Jun.Electronic structure and optical properties of transition metal doped titanate nanotubes. Acta Physica Sinica, 2010, 59(2): 1314-1320.doi:10.7498/aps.59.1314 |
[10] |
Li Mei-Ya, Wang Jing, Liu Jun, Yu Ben-Fang, Guo Dong-Yun, Zhao Xing-Zhong.Dependence of growth and property of YBa2Cu3O7-x coated conductors on the thickness of CeO2 buffer layer. Acta Physica Sinica, 2008, 57(5): 3132-3137.doi:10.7498/aps.57.3132 |
[11] |
Shen Yi-Bin, Zhou Xun, Xu Ming, Ding Ying-Chun, Duan Man-Yi, Linghu Rong-Feng, Zhu Wen-Jun.Electronic structure and optical properties of ZnO doped with transition metals. Acta Physica Sinica, 2007, 56(6): 3440-3445.doi:10.7498/aps.56.3440 |
[12] |
Wang Song-You, Duan Guo-Yu, Qiu Jian-Hong, Jia Yu, Chen Liang-Yao.PtN in zinc-blende structure: An unstable metallic transition-metal nitride compound. Acta Physica Sinica, 2006, 55(4): 1979-1982.doi:10.7498/aps.55.1979 |
[13] |
Zheng Fen-Gang, Chen Jian-Ping, Li Xin-Wan.Improved dielectric and ferroelectric characteristics of highly (111)-oriented Pb(Zr0.52Ti0.48)O3 films produced by sol-gel method. Acta Physica Sinica, 2006, 55(6): 3067-3072.doi:10.7498/aps.55.3067 |
[14] |
Zeng Guang-Gen, Zheng Jia-Gui, Li Bing, Lei Zhi, Wu Li-Li, Cai Ya-Ping, Li Wei, Zhang Jing-Quan, Cai Wei, Feng Liang-Huan.Polycrystalline CdS/CdTe thin-film solar cells with intrinsic SnO2 films of high resistance. Acta Physica Sinica, 2006, 55(9): 4854-4859.doi:10.7498/aps.55.4854 |
[15] |
Wang Jing, Liu Gui-Chang, Ji Da-Peng, Xu Jun, Deng Xin-Lu.Diamond-like carbon (DLC) films deposited on copper substrate through preparation of intermediate layers. Acta Physica Sinica, 2006, 55(7): 3748-3755.doi:10.7498/aps.55.3748 |
[16] |
Li Shu-Ping, Wang Ren-Zhi.Formation mechanism of interface charges in the metal-semiconductor superlattices. Acta Physica Sinica, 2004, 53(9): 2925-2930.doi:10.7498/aps.53.2925 |
[17] |
Li Tie, Shen Hong-Lie, Shen Qin-Wo, Zou Shi-Chang.Study on Giant Magnetoresistance of Co/Cu/Co Sandwich on Different Buffer Layers. Acta Physica Sinica, 1999, 48(13): 28-34.doi:10.7498/aps.48.28 |
[18] |
ZHENG YONG-MEI, CHEN YU, MIAO RONG-ZHI.ON THE CONTINUOUS TRANSITION FROM PTC EFFECT TO GBBL CAPACITOR FOR BaTiO3 SEMICONDUCTING CERAMICS——APPLICATION OF THE GRAIN BOUNDARY BARRIER MODEL. Acta Physica Sinica, 1996, 45(9): 1543-1550.doi:10.7498/aps.45.1543 |
[19] |
ZHANG XIAO-PING, GAO ZHI-QIANG, SUN BI-WU, XIE KAN, LIN ZHANG-DA.A STUDY ON STRUCTURAL STABILITY OF BUFFER LAYER BETWEEN SILICON SUBSTRATE AND DIAMOND FILM. Acta Physica Sinica, 1993, 42(2): 309-313.doi:10.7498/aps.42.309 |
[20] |
GU YI-MING, HUANG MING-ZHU, WANG KE LING.ELECTRONIC STRUCTURES OF 3d-TRANSITION METAL IN GaAs1-xPx ALLOY SYSTEM. Acta Physica Sinica, 1988, 37(1): 11-19.doi:10.7498/aps.37.11 |