| [1] |
Duan Bao-Xing, Liu Yu-Lin, Tang Chun-Ping, Yang Yin-Tang.Novel majority carrier accumulation insulated gate bipolar transistor with Schottky junction. Acta Physica Sinica, 2024, 73(7): 078501.doi:10.7498/aps.73.20231768 |
| [2] |
Duan Bao-Xing, Wang Jia-Sen, Tang Chun-Ping, Yang Yin-Tang.Noval carrier accumulation reverse-conducting lateral insulated gate bipolar transistor. Acta Physica Sinica, 2024, 73(15): 157301.doi:10.7498/aps.73.20240572 |
| [3] |
Li Yan, Chen Xin-Li, Wang Wei-Sheng, Shi Zhi-Wen, Zhu Li-Qiang.Egg shell membrane based electrolyte gated oxide neuromorphic transistor. Acta Physica Sinica, 2023, 72(15): 157302.doi:10.7498/aps.72.20230411 |
| [4] |
Liu Jing, Dang Yue-Dong, Liu Hui-Ting, Zhao Yan.Novel dual-direction electrostatic discharge device with lateral PNP transistor. Acta Physica Sinica, 2022, 71(23): 238501.doi:10.7498/aps.71.20220824 |
| [5] |
Yu Xue-Ling, Chen Feng-Xiang, Xiang Tao, Deng Wen, Liu Jia-Ning, Wang Li-Sheng.Research on the photoelectric modulation and resistive switching characteristic of ReSe2/WSe2memtransistor. Acta Physica Sinica, 2022, 0(0): .doi:10.7498/aps.7120221154 |
| [6] |
Yu Xue-Ling, Chen Feng-Xiang, Xiang Tao, Deng Wen, Liu Jia-Ning, Wang Li-Sheng.Photoelectric modulation and resistive switching characteristic of ReSe2/WSe2memtransistor. Acta Physica Sinica, 2022, 71(21): 217302.doi:10.7498/aps.71.20221154 |
| [7] |
Gou Shi-Long, Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Sheng Jiang-Kun, Xue Yuan-Yuan, Pan Chen.Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environment. Acta Physica Sinica, 2021, 70(15): 156101.doi:10.7498/aps.70.20210351 |
| [8] |
Yang Jian-Qun, Dong Lei, Liu Chao-Ming, Li Xing-Ji, Xu Peng-Fei.Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors. Acta Physica Sinica, 2018, 67(16): 168501.doi:10.7498/aps.67.20172215 |
| [9] |
Chen Cong, Liang Pan, Hu Rong-Rong, Jia Tian-Qing, Sun Zhen-Rong, Feng Dong-Hai.Pump-orientation-probe technique and its applications. Acta Physica Sinica, 2018, 67(9): 097201.doi:10.7498/aps.67.20180244 |
| [10] |
Guo Chun-Sheng, Ding Yan, Jiang Bo-Yang, Liao Zhi-Heng, Su Ya, Feng Shi-Wei.High-efficiency on-line measurement of junction temperature based on bipolar transistors in accelerated experiment. Acta Physica Sinica, 2017, 66(22): 224703.doi:10.7498/aps.66.224703 |
| [11] |
Tan Ji, Zhu Yang-Jun, Lu Shuo-Jin, Tian Xiao-Li, Teng Yuan, Yang Fei, Zhang Guang-Yin, Shen Qian-Xing.Modeling and simulation of the insulated gate bipolar transistor turn-off voltage slope under inductive load. Acta Physica Sinica, 2016, 65(15): 158501.doi:10.7498/aps.65.158501 |
| [12] |
Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei.Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model. Acta Physica Sinica, 2015, 64(13): 136104.doi:10.7498/aps.64.136104 |
| [13] |
Ma Wu-Ying, Wang Zhi-Kuan, Lu Wu, Xi Shan-Bin, Guo Qi, He Cheng-Fa, Wang Xin, Liu Mo-Han, Jiang Ke.The base current broadening effect and charge separation method of gate-controlled lateral PNP bipolar transistors. Acta Physica Sinica, 2014, 63(11): 116101.doi:10.7498/aps.63.116101 |
| [14] |
Zhou Shou-Li, Li Jia, Ren Hong-Liang, Wen Hao, Peng Yin-Sheng.The impact of interface charges at the heterojunction on the carriers transport in abrupt InP/InGaAs heterojunction bipolar transistor. Acta Physica Sinica, 2013, 62(17): 178501.doi:10.7498/aps.62.178501 |
| [15] |
Zhang Jin-Xin, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Xi Shan-Bin, Wang Xin, Deng Wei.3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2013, 62(4): 048501.doi:10.7498/aps.62.048501 |
| [16] |
Li Xing-Ji, Lan Mu-Jie, Liu Chao-Ming, Yang Jian-Qun, Sun Zhong-Liang, Xiao Li-Yi, He Shi-Yu.The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors. Acta Physica Sinica, 2013, 62(9): 098503.doi:10.7498/aps.62.098503 |
| [17] |
Li Fei, Xiao Liu, Liu Pu-Kun, Yi Hong-Xia, Wan Xiao-Sheng.A study on the cut-off amplification factor of the grid with film sphere and porous structure in grid- controlled electron gun. Acta Physica Sinica, 2012, 61(7): 078502.doi:10.7498/aps.61.078502 |
| [18] |
Xi Shan-Bin, Lu Wu, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing, Wu Xue.Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors. Acta Physica Sinica, 2012, 61(23): 236103.doi:10.7498/aps.61.236103 |
| [19] |
Wang Qiang.Charge order and phase separation in Bi0.5Ca0.5Mn1-xCoxO3 system. Acta Physica Sinica, 2010, 59(9): 6569-6574.doi:10.7498/aps.59.6569 |
| [20] |
Meng Zhi-Guo, Wu Chun-Ya, Li Juan, Xiong Shao-Zhen, Kwok Hoi S., Man Wong.Low-temperature metal-induced unilateral crystallized polycrystalline silicon thin-film transistor and gate-modulated lightly-doped drain structure. Acta Physica Sinica, 2005, 54(7): 3363-3369.doi:10.7498/aps.54.3363 |
下载: