[1] |
Wang Run, Jia Ya-Lan, Zhang Yue, Ma Xing-Juan, Xu Qiang, Zhu Zhi-Xin, Deng Yan-Hong, Xiong Zu-Hong, Gao Chun-Hong.High efficiency green perovskite light-emitting diodes based on exciton blocking layer. Acta Physica Sinica, 2020, 69(3): 038501.doi:10.7498/aps.69.20191263 |
[2] |
Zhao Sheng-Sheng, Xu Yu-Zeng, Chen Jun-Fan, Zhang Li, Hou Guo-Fu, Zhang Xiao-Dan, Zhao Ying.Research progress of crystalline silicon solar cells with dopant-free asymmetric heterocontacts. Acta Physica Sinica, 2019, 68(4): 048801.doi:10.7498/aps.68.20181991 |
[3] |
Pu Nian-Nian, Li Hai-Rong, Xie Long-Zhen.Influence of NiOx hole-transporting layer on the light absorption of the polymer solar cells. Acta Physica Sinica, 2014, 63(6): 067201.doi:10.7498/aps.63.067201 |
[4] |
Wei Xiao-Xu, Cheng Ying, Huo Da, Zhang Yu-Han, Wang Jun-Zhuan, Hu Yong, Shi Yi.PL enhancement of MoS2 by Au nanoparticles. Acta Physica Sinica, 2014, 63(21): 217802.doi:10.7498/aps.63.217802 |
[5] |
Chen Li-Jing, Li Wei-Xue, Dai Jian-Feng, Wang Qing.First-prinicples study of Mn-N co-doped p-type ZnO. Acta Physica Sinica, 2014, 63(19): 196101.doi:10.7498/aps.63.196101 |
[6] |
Jian Lei, Tan Ying-Xiong, Li Quan, Zhao Ke-Qing.Charge transport properties of truxene derivatives molecules. Acta Physica Sinica, 2013, 62(18): 183101.doi:10.7498/aps.62.183101 |
[7] |
Yu Huang-Zhong.Progress in the blend stacked structure of organic solar cells. Acta Physica Sinica, 2013, 62(2): 027201.doi:10.7498/aps.62.027201 |
[8] |
Yao Guang-Rui, Fan Guang-Han, Zheng Shu-Wen, Ma Jia-Hong, Chen Jun, Zhang Yong, Li Shu-Ti, Su Shi-Chen, Zhang Tao.First-principles study of p-type ZnO by Te-N codoping. Acta Physica Sinica, 2012, 61(17): 176105.doi:10.7498/aps.61.176105 |
[9] |
Chen Jun, Fan Guang-Han, Zhang Yun-Yan.Investigation of spectral regulation in dual- wavelength light-emitting diodes by using the selective p-doped barriers. Acta Physica Sinica, 2012, 61(8): 088502.doi:10.7498/aps.61.088502 |
[10] |
Wan Wen-Jian, Yao Ruo-He, Geng Kui-Wei.Electronic structure of CuAlS2 doped with Mg and Zn. Acta Physica Sinica, 2011, 60(6): 067103.doi:10.7498/aps.60.067103 |
[11] |
Yan Yue, Zhao Su-Ling, Xu Zheng, Gong Wei, Wang Da-Wei.Effect of 3,4,9,10-perylenetetracarboxylic dianhydride on the performance of ZnO nanorods/polymer hybrid solar cell. Acta Physica Sinica, 2011, 60(8): 088803.doi:10.7498/aps.60.088803 |
[12] |
Chen Wei-Bing, Yang Wei-Feng, Zou Hao-Jie, Tang Jian-Xing, Deng Lin-Feng, Li Pei-Tao.A study of CuPc-doping MEH-PPV/PCBM organic photovoltaic devices. Acta Physica Sinica, 2011, 60(11): 117107.doi:10.7498/aps.60.117107 |
[13] |
Deng Bei, Sun Hui-Qing, Guo Zhi-You, Gao Xiao-Qi.Theoretical analysis on the improvement of p-type ZnO by B-N codoping. Acta Physica Sinica, 2010, 59(2): 1212-1218.doi:10.7498/aps.59.1212 |
[14] |
Niu Lian-Bin, Guan Yun-Xia.Fullerene-doped hole transport NPB layer in organic light-emitting devices. Acta Physica Sinica, 2009, 58(7): 4931-4935.doi:10.7498/aps.58.4931 |
[15] |
Dang Sui-Hu, Li Chun-Xia, Han Pei-De.First-principles calculation of CdS electronic structure doped with Mg and Cu. Acta Physica Sinica, 2009, 58(6): 4137-4143.doi:10.7498/aps.58.4137 |
[16] |
Ji Hai-Ming, Cao Yu-Lian, Yang Tao, Ma Wen-Quan, Cao Qing, Chen Liang-Hui.Characteristic study of maximum modal gain of p-doped 1.3 μm InAs/GaAs quantum dot lasers. Acta Physica Sinica, 2009, 58(3): 1896-1900.doi:10.7498/aps.58.1896 |
[17] |
Wang Jing-Wei, Bian Ji-Ming, Sun Jing-Chang, Liang Hong-Wei, Zhao Jian-Ze, Du Guo-Tong.Ag doped p-type ZnO films and its optical and electrical properties. Acta Physica Sinica, 2008, 57(8): 5212-5216.doi:10.7498/aps.57.5212 |
[18] |
Ding Shao-Feng, Fan Guang-Han, Li Shu-Ti, Xiao Bing.First-principles study of the p-type doped InN. Acta Physica Sinica, 2007, 56(7): 4062-4067.doi:10.7498/aps.56.4062 |
[19] |
Ren Ju, Zheng Jian-Bang, Zhao Jian-Lin.Optimized design of active layers in organic donor-acceptor solar cells. Acta Physica Sinica, 2007, 56(5): 2868-2872.doi:10.7498/aps.56.2868 |
[20] |
Yuan Ning-Yi, Li Jin-Hua, Fan Li-Ning, Wang Xiu-Qin, Xie Jian-Sheng.Preparation and mechanism of p-type ZnO films formed by modified ion beam enhanced deposition method. Acta Physica Sinica, 2006, 55(7): 3581-3584.doi:10.7498/aps.55.3581 |