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Abstract

The novel electron trapping material of Sr2SnO4: Tb3+, Li+ for optical storage is synthesized by the solid state method. Stimulated by 980 nm infrared laser, the material shows intense up-conversion photostimulated luminescence. The ultraviolet light at 292 nm is an optimal writing source. The material has less shallow traps, which corresponds to its weak afterglow (less than 500 s). On the other hand, this material has lots of deep traps. Thus, the Sr2SnO4:Tb3 +, Li+ is a promising optical storage material. In addition, we propose the optical storage luminescence mechanism of Sr2SnO4:Tb3 +, Li +.

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1.
Funds:Project supported by the National Nature Science Young Foundation of China (Grant No. 10904057), the National College of Innovative Pilot Scheme (Grant No. 101073005), and the Central Scientific Research Operating Expenses (Grant No. Lzjbky-2011-125).

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Vol. 61, Issue 9 - 2012-05-05

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