A method of balancing the output power and threshold current property of vertical cavity surface emitting laser is studied. The relationship between proton implantation energy and device performance is analyzed by simulation and experiment. It is found that a higher injection energy can destroy the active region, thus reducing the output power property. The threshold current will be increased since a lower injection energy may weaken the restriction on the injection current. The results indicate that 315 keV injection energy is the right choice for our device structure. The output power and threshold current obtained under 10 μm aperture are 1.7 mW and 4.3 mW, respectively.