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Abstract

Novel Ga30Sb70/Sb80Te20 nanocomposite multilayer films are prepared by alternate sputter deposition of two independent targets of Ga30Sb70 and Sb80Te20 in a magnetron sputtering system. The influence of layer thickness of Ga30Sb70 on the phase-change behavior of Ga30Sb70/Sb80Te20 multilayer film is investigated. The results show that the crystallization temperature can be controlled by adjusting the layer thickness of Ga30Sb70. The crystallization temperature increases with increasing the layer thickness of Ga30Sb70. The optical band gap is also found to increase with increasing in the layer thickness of Ga30Sb70. Transient crystallization dynamics of Ga30Sb70/Sb80Te20 multilayer film induced by single picosecond laser pulse pumping, is studied. The reversible phase transition between amorphous and crystalline state can be achieved by using picosecond laser pulses with different fluences.

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Funds:Project supported by the National High Technology Research and Development Program of China (Grant No. 2008AA031402) , the National Natural Science Foundation of China (Grant No. 51202148) and the Foundation Project by Science and Technology Council of Shanghai, China (Grant No. 1052 nm07200).

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Vol. 62, Issue 3 - 2013-02-05

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