[1] |
Pan Peng-Hui, Ji Peng-Fei, Lin Gen, Dong Xi-Ming, Zhao Jin-Hui.Theoretical and experimental research of femtosecond laser processing fused silica. Acta Physica Sinica, 2022, 71(24): 247901.doi:10.7498/aps.71.20221496 |
[2] |
Zhang Qian, Li Meng, Gong Qi-Huang, Li Yan.Femtosecond laser direct writing of optical quantum logic gates. Acta Physica Sinica, 2019, 68(10): 104205.doi:10.7498/aps.68.20190024 |
[3] |
Wei Wei-Hua, Li Mu-Tian, Liu Mo-Nan.Coupled microcavities with unidirectional single mode via femtosecond laser direct-writing. Acta Physica Sinica, 2018, 67(6): 064203.doi:10.7498/aps.67.20172395 |
[4] |
Zhang Xin-Zheng, Xia Feng, Xu Jing-Jun.The mechanisms and research progress of laser fabrication technologies beyond diffraction limit. Acta Physica Sinica, 2017, 66(14): 144207.doi:10.7498/aps.66.144207 |
[5] |
Gao Si, Wang Zi-Han, Hua Jian-Guan, Li Qian-Kun, Li Ai-Wu, Yu Yan-Hao.Sub-diffraction-limit fabrication of sapphire by femtosecond laser direct writing. Acta Physica Sinica, 2017, 66(14): 147901.doi:10.7498/aps.66.147901 |
[6] |
Deng Fa-Ming.Effect of intense laser irradiation on the electronic properties of 6H-SiC. Acta Physica Sinica, 2016, 65(10): 107101.doi:10.7498/aps.65.107101 |
[7] |
Gao Ren-Xi, Gao Sheng-Ying, Fan Guang-Hua, Liu Jie, Wang Qiang, Zhao Hai-Feng, Qu Shi-Liang.Enhancement of surface photoconductivityin 6H-silicon carbide crystal modified by femtosecond laser pulse irradiation. Acta Physica Sinica, 2014, 63(6): 067801.doi:10.7498/aps.63.067801 |
[8] |
Du Yang-Yang, Li Bing-Sheng, Wang Zhi-Guang, Sun Jian-Rong, Yao Cun-Feng, Chang Hai-Long, Pang Li-Long, Zhu Ya-Bin, Cui Ming-Huan, Zhang Hong-Peng, Li Yuan-Fei, Wang Ji, Zhu Hui-Ping, Song Peng, Wang Dong.Spectra study of He-irradiation induced defects in 6H-SiC. Acta Physica Sinica, 2014, 63(21): 216101.doi:10.7498/aps.63.216101 |
[9] |
Wang Wen-Ting, Hu Bing, Wang Ming-Wei.Femtosecond laser fine machining of energetic materials. Acta Physica Sinica, 2013, 62(6): 060601.doi:10.7498/aps.62.060601 |
[10] |
Qiao Da-Yong, Chen Xue-Jiao, Ren Yong, Zang Bo, Yuan Wei-Zheng.A nuclear micro-battery based on silicon PIN diode. Acta Physica Sinica, 2011, 60(2): 020701.doi:10.7498/aps.60.020701 |
[11] |
Li Li-Min, Pan Hai-Bin, Yan Wen-Sheng, Xu Peng-Shou, Wei Shi-Qiang, Chen Xiu-Fang, Xu Xian-Gang, Kang Chao-Yang, Tang Jun.Preparation of graphene on different-polarity 6H-SiC substrates and the study of their electronic structures. Acta Physica Sinica, 2011, 60(4): 047302.doi:10.7498/aps.60.047302 |
[12] |
Liu Si-Si, Zhang Chao-Hui, Liu Jun-Ming.Calculation of meniscus force during separation of microsurfaces. Acta Physica Sinica, 2010, 59(10): 6902-6907.doi:10.7498/aps.59.6902 |
[13] |
Qin Xi-Feng, Wang Feng-Xiang, Liang Yi, Fu Gang, Zhao You-Mei.Investigation of the lateral spread of Er ions implanted in 6H-SiC. Acta Physica Sinica, 2010, 59(9): 6390-6393.doi:10.7498/aps.59.6390 |
[14] |
Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei.Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts. Acta Physica Sinica, 2009, 58(5): 3443-3447.doi:10.7498/aps.58.3443 |
[15] |
Tang Chao, Ji Lu, Meng Li-Jun, Sun Li-Zhong, Zhang Kai-Wang, Zhong Jian-Xin.Growth of graphene structure on 6H-SiC(0001): Molecular dynamics study. Acta Physica Sinica, 2009, 58(11): 7815-7820.doi:10.7498/aps.58.7815 |
[16] |
Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong.Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica, 2009, 58(5): 3302-3308.doi:10.7498/aps.58.3302 |
[17] |
Sun Ji-Yong, Huang Shang-Lian, Zhang Jie, Zhang Zhi-Hai.Effect of dielectric charging on gating light modulator. Acta Physica Sinica, 2008, 57(6): 3600-3606.doi:10.7498/aps.57.3600 |
[18] |
Zhou Yong-Hua, Zhang Yi-Men, Zhang Yu-Ming, Meng Xiang-Zhi.Simulation and analysis of 6H-SiC pn junction ultraviolet photodetector. Acta Physica Sinica, 2004, 53(11): 3710-3715.doi:10.7498/aps.53.3710 |
[19] |
SHANG YE-CHUN, ZHANG YI-MEN, ZHANG YU-MING.MONTE CARLO STUDY ON INTERFACE ROUGHNESS DEPENDENCE OF ELECTRON MOBILITY IN 6H-SiC INVERSION LAYERS. Acta Physica Sinica, 2001, 50(7): 1350-1354.doi:10.7498/aps.50.1350 |
[20] |
SHANG YE-CHUN, ZHANG YI-MEN, ZHANG YU-MING.MONTE CARLO SIMULATION OF ELECTRON TRANSPORT IN 6H-SiC. Acta Physica Sinica, 2000, 49(9): 1786-1791.doi:10.7498/aps.49.1786 |