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Abstract

The effects of total ionizing dose on narrow-channel N-type metal-oxide-semiconductor field-effect-transistors (NMOSFETs) in a 130 nm partially depleted silicon-on-insulator (SOI) technology are presented. The charge conservation principle is utilized to analyze the radiation-induced narrow-channel effect (RINCE). In addition, it is found for the first time, as for as we know that for the narrow-channel NMOSFETs operated in the linear region, the radiation-induced positive charges trapped in the shallow trench isolation can increase the probability of electron-electron collisions and surface roughness scattering, resulting in the degradation of the carrier mobility and transconductance of the main transistor. Finally, the RINCE as well as the degradation of the carrier mobility has been verified by our three-dimensional device simulation; and good agreement between the simulation and experimental results is obtained.

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[2]	Zhang Lin, Ma Lin-Dong, Du Lin, Li Yan-Bo, Xu Xian-Feng, Huang Xin-Rong.Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage. Acta Physica Sinica, 2023, 72(13): 138501.doi:10.7498/aps.72.20230207
[3]	Zhang Shu-Hao, Yuan Zhang-Yi-An, Qiao Ming, Zhang Bo.Simulation study on radiation hardness for total ionizing dose effect of ultra-thin shielding layer 300 V SOI LDMOS. Acta Physica Sinica, 2022, 71(10): 107301.doi:10.7498/aps.71.20220041
[4]	Cao Yang, Xi Kai, Xu Yan-Nan, Li Mei, Li Bo, Bi Jin-Shun, Liu Ming.Total ionizing dose effects ofγand X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell. Acta Physica Sinica, 2019, 68(3): 038501.doi:10.7498/aps.68.20181661
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[9]	Wu Xue, Lu Wu, Wang Xin, Xi Shan-Bin, Guo Qi, Li Yu-Dong.Total ionizing dose effect on 0.18 μm narrow-channel NMOS transistors. Acta Physica Sinica, 2013, 62(13): 136101.doi:10.7498/aps.62.136101
[10]	Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An.Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials. Acta Physica Sinica, 2013, 62(11): 117303.doi:10.7498/aps.62.117303
[11]	Peng Li, Zhuo Qing-Qing, Liu Hong-Xia, Cai Hui-Min.Gate length dependence of SOI NMOS device response to total dose irradiation. Acta Physica Sinica, 2012, 61(24): 240703.doi:10.7498/aps.61.240703
[12]	Zhuo Qing-Qing, Liu Hong-Xia, Yang Zhao-Nian, Cai Hui-Min, Hao Yue.The total dose irradiation effects of SOI NMOS devices under different bias conditions. Acta Physica Sinica, 2012, 61(22): 220702.doi:10.7498/aps.61.220702
[13]	Hu Zhi-Yuan, Liu Zhang-Li, Shao Hua, Zhang Zheng-Xuan, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang.The influence of channel length on total ionizing dose effect in deep submicron technologies. Acta Physica Sinica, 2012, 61(5): 050702.doi:10.7498/aps.61.050702
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[16]	Zhang En-Xia, Tang Hai-Ma, Zheng Zhong-Shan, Yu Fang, Li Ning, Wang Ning-Juan, Li Guo-Hua, Ma Hong-Zhi.Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers. Acta Physica Sinica, 2011, 60(5): 056104.doi:10.7498/aps.60.056104
[17]	Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang.Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica, 2011, 60(11): 116103.doi:10.7498/aps.60.116103
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[19]	Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi.Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica, 2007, 56(6): 3504-3508.doi:10.7498/aps.56.3504
[20]	HAO YUE, ZHU JIAN-GANG, GUO LIN, ZHANG ZHENG-FAN.. Acta Physica Sinica, 2001, 50(1): 120-125.doi:10.7498/aps.50.120

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Vol. 62, Issue 7 - 2013-04-05

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