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Li Jing-Hui, Cao Sheng-Guo, Han Jia-Ning, Li Zhan-Hai, Zhang Zhen-Hua.Electrical contact properties of 2D metal-semiconductor heterojunctions composed of different phases of NbS2and GeS2. Acta Physica Sinica, 2024, 73(13): 137102.doi:10.7498/aps.73.20240530 |
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Huang Min, Li Zhan-Hai, Cheng Fang.Tunable electronic structures and interface contact in graphene/C3N van der Waals heterostructures. Acta Physica Sinica, 2023, 72(14): 147302.doi:10.7498/aps.72.20230318 |
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Tang Jia-Xin, Li Zhan-Hai, Deng Xiao-Qing, Zhang Zhen-Hua.Electrical contact characteristics and regulatory effects of GaN/VSe2van der Waals heterojunction. Acta Physica Sinica, 2023, 72(16): 167101.doi:10.7498/aps.72.20230191 |
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Huang Ling-Qin, Zhu Jing, Ma Yue, Liang Ting, Lei Cheng, Li Yong-Wei, Gu Xiao-Gang.Research status and progress of metal contacts of SiC power devices. Acta Physica Sinica, 2021, 70(20): 207302.doi:10.7498/aps.70.20210675 |
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Wang Su-Jie, Li Shu-Qiang, Wu Xiao-Ming, Chen Fang, Jiang Feng-Yi.Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP. Acta Physica Sinica, 2020, 69(4): 048103.doi:10.7498/aps.69.20191720 |
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He Tian-Li, Wei Hong-Yuan, Li Cheng-Ming, Li Geng-Wei.Comparative study of n-GaN transition group refractory metal Ohmic electrode. Acta Physica Sinica, 2019, 68(20): 206101.doi:10.7498/aps.68.20190717 |
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Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun, Zhao Ming-Jie.Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method. Acta Physica Sinica, 2019, 68(17): 178501.doi:10.7498/aps.68.20190699 |
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Wei Zheng-Hong, Yun Feng, Ding Wen, Huang Ya-Ping, Wang Hong, Li Qiang, Zhang Ye, Guo Mao-Feng, Liu Shuo, Wu Hong-Bin.Reflective Ni/Ag/Ti/Au electrode with low specific contact resistivity. Acta Physica Sinica, 2015, 64(12): 127304.doi:10.7498/aps.64.127304 |
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Lu Wu-Yue, Zhang Yong-Ping, Chen Zhi-Zhan, Cheng Yue, Tan Jia-Hui, Shi Wang-Zhou.Effect of different annealing treatment methods on the Ni/SiC contact interface properties. Acta Physica Sinica, 2015, 64(6): 067303.doi:10.7498/aps.64.067303 |
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Bai Jun-Xue, Guo Wei-Ling, Sun Jie, Fan Xing, Han Yu, Sun Xiao, Xu Ru, Lei Jun.Research on the relationship between ideality factor and number of units of GaN-based high voltage light-emitting diode. Acta Physica Sinica, 2015, 64(1): 017303.doi:10.7498/aps.64.017303 |
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Zhu Yan-Xu, Cao Wei-Wei, Xu Chen, Deng Ye, Zou De-Shu.Effect of different ohmic contact pattern on GaN HEMT electrical properties. Acta Physica Sinica, 2014, 63(11): 117302.doi:10.7498/aps.63.117302 |
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Huang Ya-Ping, Yun Feng, Ding Wen, Wang Yue, Wang Hong, Zhao Yu-Kun, Zhang Ye, Guo Mao-Feng, Hou Xun, Liu Shuo.The reflectivity and ohmic contact resistivity of Ni/Ag/Ti/Au in contact with p-GaN. Acta Physica Sinica, 2014, 63(12): 127302.doi:10.7498/aps.63.127302 |
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Li Xiao-Jing, Zhao De-Gang, He Xiao-Guang, Wu Liang-Liang, Li Liang, Yang Jing, Le Ling-Cong, Chen Ping, Liu Zong-Shun, Jiang De-Sheng.Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN. Acta Physica Sinica, 2013, 62(20): 206801.doi:10.7498/aps.62.206801 |
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Wang Xiao-Yong, Chong Ming, Zhao De-Gang, Su Yan-Mei.Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact. Acta Physica Sinica, 2012, 61(21): 217302.doi:10.7498/aps.61.217302 |
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Pan Shu-Wan, Qi Dong-Feng, Chen Song-Yan, Li Cheng, Huang Wei, Lai Hong-Kai.Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact. Acta Physica Sinica, 2011, 60(9): 098108.doi:10.7498/aps.60.098108 |
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Huang Wei, Chen Zhi-Zhan, Chen Yi, Shi Er-Wei, Zhang Jing-Yu, Liu Qing-Feng, Liu Qian.Effect of Ni thickness on the contact properties of Ni/6H-SiC analyzed by combinatorial method. Acta Physica Sinica, 2010, 59(5): 3466-3472.doi:10.7498/aps.59.3466 |
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Wang Guang-Xu, Jiang Feng-Yi, Feng Fei-Fei, Liu Jun-Lin, Qiu Chong.N-polar n-type ohmic contact of GaN-based LED on Si substrate. Acta Physica Sinica, 2010, 59(8): 5706-5709.doi:10.7498/aps.59.5706 |
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Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei.Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts. Acta Physica Sinica, 2009, 58(5): 3443-3447.doi:10.7498/aps.58.3443 |
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Ding Zhi-Bo, Wang Kun, Chen Tian-Xiang, Chen Di, Yao Shu-De.Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time. Acta Physica Sinica, 2008, 57(4): 2445-2449.doi:10.7498/aps.57.2445 |
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WANG YIN-YUE, ZHEN CONG-MIAN, GONG HENG-XIANG, YAN ZHI-JUN, WANG YA-FAN, LIU XUE-QIN, YANG YING-HU, HE SHAN-HU.MEASUREMENT OF THE SPECIFIC CONTACT RESISTANCE OF Au/Ti/p-DIAMOND USING TRANSMIS SION LINE MODEL. Acta Physica Sinica, 2000, 49(7): 1348-1351.doi:10.7498/aps.49.1348 |
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