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Lü Ling, Xing Mu-Han, Xue Bo-Rui, Cao Yan-Rong, Hu Pei-Pei, Zheng Xue-Feng, Ma Xiao-Hua, Hao Yue.Effect of heavy ion radiation on low frequency noise characteristics of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2024, 73(3): 036103.doi:10.7498/aps.73.20221360 |
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Yang Xiao-Rong, Wang Qiong, Ye Tang-Jin, Tudeng Ci-Ren.Continuous time random walk model with advection and diffusion as two distinct dynamical origins. Acta Physica Sinica, 2019, 68(13): 130501.doi:10.7498/aps.68.20190088 |
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Yang Di, Wang Yuan-Mei, Li Jun-Gang.Influence of parameter prior information on effect of colored noise in Bayesian frequency estimation. Acta Physica Sinica, 2018, 67(6): 060301.doi:10.7498/aps.67.20171911 |
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Shen Yong, Dong Jia-Qi, Xu Hong-Bing.Role of impurities in modifying isotope scaling law of ion temperature gradient turbulence driven transport in tokamak. Acta Physica Sinica, 2018, 67(19): 195203.doi:10.7498/aps.67.20180703 |
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Shen Ya-Jun, Guo Yong-Feng, Xi Bei.Steady state characteristics in FHN neural system driven by correlated non-Gaussian noise and Gaussian noise. Acta Physica Sinica, 2016, 65(12): 120501.doi:10.7498/aps.65.120501 |
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An Xia, Huang Ru, Li Zhi-Qiang, Yun Quan-Xin, Lin Meng, Guo Yue, Liu Peng-Qiang, Li Ming, Zhang Xing.Research progress of high mobility germanium based metal oxide semiconductor devices. Acta Physica Sinica, 2015, 64(20): 208501.doi:10.7498/aps.64.208501 |
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Li Shuai-Shuai, Liang Chao-Xu, Wang Xue-Xia, Li Yan-Hui, Song Shu-Mei, Xin Yan-Qing, Yang Tian-Lin.The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors. Acta Physica Sinica, 2013, 62(7): 077302.doi:10.7498/aps.62.077302 |
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Yu Yao, Zhang Jing-Si, Chen Dai-Dai, Guo Rui-Qian, Gu Zhi-Hua.Improving the mobility of the amorphous silicon TFT with the new stratified structure by PECVD. Acta Physica Sinica, 2013, 62(13): 138501.doi:10.7498/aps.62.138501 |
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Jin Xiao-Qin, Xu Yong, Zhang Hui-Qing.The reliability of logical operation in a one-dimensional bistable system induced by non-Gaussian noise. Acta Physica Sinica, 2013, 62(19): 190510.doi:10.7498/aps.62.190510 |
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He Liang, Du Lei, Huang Xiao-Jun, Chen Hua, Chen Wen-Hao, Sun Peng, Han Liang.Non-Gaussian analysis of noise for metal interconnection electromigration. Acta Physica Sinica, 2012, 61(20): 206601.doi:10.7498/aps.61.206601 |
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Zhang Jing-Jing, Jin Yan-Fei.Stochastic resonance in FHN neural system driven by non-Gaussian noise. Acta Physica Sinica, 2012, 61(13): 130502.doi:10.7498/aps.61.130502 |
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Zhang Jing-Jing, Jin Yan-Fei.Mean first-passage time and stochastic resonance in an asymmetric bistable system driven by non-Gaussian noise. Acta Physica Sinica, 2011, 60(12): 120501.doi:10.7498/aps.60.120501 |
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Xu Chao, Kang Yan-Mei.Mean response time of FitzHugh-Nagumo model in the presence of non-Gaussian noise and a periodic signal. Acta Physica Sinica, 2011, 60(10): 108701.doi:10.7498/aps.60.108701 |
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Zhao Yan, Xu Wei, Zou Shao-Cun.The steady state probability distribution and mean first passage time of FHN neural system driven by non-Gaussian noise. Acta Physica Sinica, 2009, 58(3): 1396-1402.doi:10.7498/aps.58.1396 |
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Guo Pei-Rong, Xu Wei, Liu Di.Time dependence of entropy flux and entropy production for a stochastic system with double singularities driven by non-Gaussian noise. Acta Physica Sinica, 2009, 58(8): 5179-5185.doi:10.7498/aps.58.5179 |
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan.An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica, 2006, 55(11): 6090-6094.doi:10.7498/aps.55.6090 |
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Li Ze-Hong, Li Zhao-Ji, Zhang Bo, Fan Jian.Mobility model of nonuniform channel MOS by radiation induced positive spatial charge. Acta Physica Sinica, 2004, 53(2): 561-565.doi:10.7498/aps.53.561 |
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LI ZHI-FENG, LU WEI, YE HONG-JUAN, YUAN XIAN-ZHANG, SHEN XUE-CHU, G.Li, S.J.Chua.OPTICAL SPECTROSCOPY STUDY ON CARRIER CONCENTRATION AND MOBILITY IN GaN. Acta Physica Sinica, 2000, 49(8): 1614-1619.doi:10.7498/aps.49.1614 |
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CHEN JIN-CHANG, ZHAN WEN-SHAN, SHEN BAO-GEN, ZHAO JIAN-GAO, LE GUAN.LOW TEMPERATURE RESISTIVITY ANOMALY OF AMORPHOUS(Fe1-x Wx)84.5 B15.5 ALLOYS. Acta Physica Sinica, 1986, 35(1): 25-32.doi:10.7498/aps.35.25 |
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ZHOU BING-LIN, CHEN ZHENG-XIU.ON THE LOW MOBILITY OF GaAs. Acta Physica Sinica, 1985, 34(4): 537-541.doi:10.7498/aps.34.537 |