| [1] |
Wang Quan-Jie, Deng Yu-Ge, Wang Ren-Zong, Liu Xiang-Jun.Interface engineering moderated interfacial thermal conductance of GaN-based heterointerfaces. Acta Physica Sinica, 2023, 72(22): 226301.doi:10.7498/aps.72.20230791 |
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Liu Bo-Yang, Song Wen-Tao, Liu Zheng-Hui, Sun Xiao-Juan, Wang Kai-Ming, Wang Ya-Kun, Zhang Chun-Yu, Chen Ke-Bei, Xu Geng-Zhao, Xu Ke, Li Da-Bing.Characterization of phase separation on AlGaN surfaces byin-situphotoluminescence spectroscopy and high spatially resolved surface potential images. Acta Physica Sinica, 2020, 69(12): 127302.doi:10.7498/aps.69.20200099 |
| [3] |
Fang Yu, Wu Xing-Zhi, Chen Yong-Qiang, Yang Jun-Yi, Song Ying-Lin.Study on two-photon induced ultrafast carrier dynamcis in Ge-doped GaN by transient absorption spectroscopy. Acta Physica Sinica, 2020, 69(16): 168701.doi:10.7498/aps.69.20200397 |
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Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui.Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica, 2013, 62(11): 117103.doi:10.7498/aps.62.117103 |
| [5] |
Zhang Lai-Bin, Ren Ting-Qi.Theoretical study of the ground and excited state properties of newly designed size-expanded adenine analogue x-adenine. Acta Physica Sinica, 2013, 62(10): 107102.doi:10.7498/aps.62.107102 |
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Zhang Pan-Jun, Sun Hui-Qing, Guo Zhi-You, Wang Du-Yang, Xie Xiao-Yu, Cai Jin-Xin, Zheng Huan, Xie Nan, Yang Bin.The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells. Acta Physica Sinica, 2013, 62(11): 117304.doi:10.7498/aps.62.117304 |
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Wang Yan-Wen, Wu Hua-Rui.Exciton states and optical properties in zinc-blende GaN/AlGaN quantum dot. Acta Physica Sinica, 2012, 61(10): 106102.doi:10.7498/aps.61.106102 |
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Chen Jun, Fan Guang-Han, Zhang Yun-Yan.The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica, 2012, 61(17): 178504.doi:10.7498/aps.61.178504 |
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Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan.Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica, 2011, 60(12): 127901.doi:10.7498/aps.60.127901 |
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Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen.Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica, 2011, 60(2): 028503.doi:10.7498/aps.60.028503 |
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun.Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica, 2010, 59(2): 1258-1262.doi:10.7498/aps.59.1258 |
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Zhou Mei, Zhao De-Gang.Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574.doi:10.7498/aps.57.4570 |
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Lü Ling, Gong Xin, Hao Yue.Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica, 2008, 57(2): 1128-1132.doi:10.7498/aps.57.1128 |
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong.Study on optical properties of Er/Er+O doped GaN thin films. Acta Physica Sinica, 2007, 56(3): 1621-1626.doi:10.7498/aps.56.1621 |
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Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De.Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica, 2006, 55(5): 2476-2481.doi:10.7498/aps.55.2476 |
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong.Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica, 2006, 55(3): 1407-1412.doi:10.7498/aps.55.1407 |
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Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua.A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica, 2005, 54(9): 4273-4278.doi:10.7498/aps.54.4273 |
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Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming.Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica, 2005, 54(11): 5450-5454.doi:10.7498/aps.54.5450 |
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Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun, Li Yong-Hua, Liu Feng-Qin, K. Yibulaxin.Photoelectron diffraction study on the polarity of GaN surface. Acta Physica Sinica, 2004, 53(4): 1171-1176.doi:10.7498/aps.53.1171 |
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Xie Chang-Kun, Xu Fa-Qiang, Deng Rui, Xu Peng-Shou, Liu Feng-Qin, K.Yibulaxin.. Acta Physica Sinica, 2002, 51(11): 2606-2611.doi:10.7498/aps.51.2606 |
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