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Abstract

Back-gate field effect transistors based on In-doped ZnO individual nanobelts have been fabricated using the low-cost microgrid template method. The output (Ids-Vds) and transfer (Ids-Vgs) characteristic curves for the transistors are measured, and the mobility is derived to be 622 cm2· V-1· s-1. This value is obviously superior to those for most of materials including pure ZnO in the literature, and possible influence factors have also been discussed.

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1.
Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 11074060, 51172058), the Key Project of the Science Technology and Research of Education Bureau, Heilongjiang Province, China (Grant No. 12521z012), and the Graduate Students' Scientific Research Innovation Project of Heilongjiang Province, China (2013).

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Cited By

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Vol. 63, Issue 19 - 2014-10-05

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