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Abstract

The pressure dependence of electrical properties of ZnSe was observed by means of in situ high pressure DC electrical resistivity measurement and AC impedance spectrum methods in a range of 0–35 GPa. Two structure phase transitions have been observed corresponding to the wurtzite-cinnabar-rocksalt transitions. The temperature dependence of the electrical resistivity of ZnSe is measured under different pressures. Results show that ZnSe undergoes a semiconductor to metal transition at 12 GPa. AC data also proves the above results. The pressure dependence of grain and grain boundary resistances indicates that the cinnabar is close to an isotropic material.

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Funds:Project supported by the National Natural Science Foundation of China (Grant No. 11247284), and the BoHai University Doctoral Project (Grant No. bsqd201309).

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Vol. 63, Issue 21 - 2014-11-05

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