- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

Strained Ge attracts attention of researchers for its high mobility and compatibility with Si technology. Based on the valence band model for compressively strained Ge/(001)Si1-xGex, the relationships between hole scattering, mobility, and Ge content (x) are established in this paper, including ionized impurity, acoustic phonon, non-polar optical phonon, total scattering rates, and the averaged and directional mobility of holes. Our quantitative data gained within the models can provide valuable references for the research of modified Ge materials physics and the design of the related devices.

Keywords:

Ge/
strain/
scattering/
mobility

Authors and contacts

1.
Funds:Project supported by the Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2014JQ8329).

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]

Cited By

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]

[1]	Zhang Leng, Zhang Peng-Zhan, Liu Fei, Li Fang-Zheng, Luo Yi, Hou Ji-Wei, Wu Kong-Ping.Carrier mobility in doped Sb₂Se₃based on deformation potential theory. Acta Physica Sinica, 2024, 73(4): 047101.doi:10.7498/aps.73.20231406
[2]	Zhang Leng, Shen Yu-Hao, Tang Chao-Yang, Wu Kong-Ping, Zhang Peng-Zhan, Liu Fei, Hou Ji-Wei.Effect of uniaxial strain on Hole mobility of Sb₂Se₃. Acta Physica Sinica, 2024, 73(11): 117101.doi:10.7498/aps.73.20240175
[3]	Sun Yu-Xin, Wu De-Fan, Zhao Tong, Lan Wu, Yang De-Ren, Ma Xiang-Yang.Mechanical strength of Czochralski silicon crystal: Effects of co-doping germanium and nitrogen. Acta Physica Sinica, 2021, 70(9): 098101.doi:10.7498/aps.70.20201803
[4]	Zhang Jie-Yin, Gao Fei, Zhang Jian-Jun.Research progress of silicon and germanium quantum computing materials. Acta Physica Sinica, 2021, 70(21): 217802.doi:10.7498/aps.70.20211492
[5]	Zuo Bo-Min, Yuan Jian-Mei, Feng Zhi, Mao Yu-Liang.First-principles study of five isomers of two-dimensional GeSe under in-plane strain. Acta Physica Sinica, 2019, 68(11): 113103.doi:10.7498/aps.68.20182266
[6]	Di Lin-Jia, Dai Xian-Ying, Song Jian-Jun, Miao Dong-Ming, Zhao Tian-Long, Wu Shu-Jing, Hao Yue.Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation. Acta Physica Sinica, 2018, 67(2): 027101.doi:10.7498/aps.67.20171969
[7]	Wang Jian-Yuan, Lin Guang-Yang, Wang Jia-Qi, Li Cheng.Simulation of spontaneous emission spectrum of degenerate Ge under large injection level. Acta Physica Sinica, 2017, 66(15): 156102.doi:10.7498/aps.66.156102
[8]	Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming.Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica, 2016, 65(1): 018501.doi:10.7498/aps.65.018501
[9]	Deng Chun-Yu, Hou Shang-Lin, Lei Jing-Li, Wang Dao-Bin, Li Xiao-Xiao.Simultaneous measurement on strain and temperature via guided acoustic-wave Brillouin scattering in single mode fibers. Acta Physica Sinica, 2016, 65(24): 240702.doi:10.7498/aps.65.240702
[10]	Shi Wen-Jun, Yi Ying-Yan, Li Min.Pressure dependence of refractive index of Ge near the absorption edge. Acta Physica Sinica, 2016, 65(16): 167801.doi:10.7498/aps.65.167801
[11]	Wang Jian-Yuan, Wang Chen, Li Cheng, Chen Song-Yan.Selective area growth of Ge film on Si. Acta Physica Sinica, 2015, 64(12): 128102.doi:10.7498/aps.64.128102
[12]	Yang Peng, Lü Yan-Wu, Wang Xin-Bo.Effect of inserted AlN layer on the two-dimensional electron gas in AlxGa1-xN/AlN/GaN. Acta Physica Sinica, 2015, 64(19): 197303.doi:10.7498/aps.64.197303
[13]	Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu.A Model of channel current for uniaxially strained Si NMOSFET. Acta Physica Sinica, 2015, 64(19): 197301.doi:10.7498/aps.64.197301
[14]	Liu Wei-Feng, Song Jian-Jun.Hole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductor. Acta Physica Sinica, 2014, 63(23): 238501.doi:10.7498/aps.63.238501
[15]	Dong Hai-Ming.Investigation on mobility of single-layer MoS2 at low temperature. Acta Physica Sinica, 2013, 62(20): 206101.doi:10.7498/aps.62.206101
[16]	Luo Yang, Duan Yu, Chen Ping, Zang Chun-Liang, Xie Yue, Zhao Yi, Liu Shi-Yong.Preliminary investigation on the method of determining electron mobility of tris (8-hydroxyquinolinato) aluminum by space charge limited current. Acta Physica Sinica, 2012, 61(14): 147801.doi:10.7498/aps.61.147801
[17]	Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Wang Xiao-Yan, Wang Guan-Yu.Hole scattering mechanism in tetragonal strained Si. Acta Physica Sinica, 2012, 61(5): 057304.doi:10.7498/aps.61.057304
[18]	Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue.High electron mobility lattice-matched InAlN/GaN materials. Acta Physica Sinica, 2011, 60(11): 117305.doi:10.7498/aps.60.117305
[19]	Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan.An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica, 2006, 55(11): 6090-6094.doi:10.7498/aps.55.6090
[20]	LI ZHI-FENG, LU WEI, YE HONG-JUAN, YUAN XIAN-ZHANG, SHEN XUE-CHU, G.Li, S.J.Chua.OPTICAL SPECTROSCOPY STUDY ON CARRIER CONCENTRATION AND MOBILITY IN GaN. Acta Physica Sinica, 2000, 49(8): 1614-1619.doi:10.7498/aps.49.1614

Catalog

Vol. 64, Issue 3 - 2015-02-05

Metrics

Abstract views:6373
PDF Downloads:354
Cited By:0

Search

Article

留言板

Abstract

Authors and contacts

References

Cited By

Catalog

Metrics

Authors

Referees

About Journal

About

Search

Article

留言板

Abstract

Authors and contacts

References

Cited By

Catalog

Metrics

Publishing process

Authors

Referees

About Journal

About