Diluted magnetic semiconductor (Ga, Mn)Sb and its related hetero-structures have attracted much attention in recent years since they are predicted to have some novel properties, such as the quantum anomalous Hall effect etc. However, it is not easy to grow high-quality (Ga, Mn)Sb films due to their narrow growth window. In this article, a series of 10 nm thick (Ga, Mn)Sb films with different Mn contents from 0.016 to 0.039 have been grown by molecular-beam epitaxy at low temperaturs (～230 ℃). The films have high crystalline quality as confirmed by in situ reflection high-energy electron diffraction and ex situ atomic force microscopy, and no MnSb phase could be observed. Curie temperature up to 30 K has been obtained in one (Ga, Mn)Sb film after post-growth thermal annealing. The magneto-resistance and anomalous Hall effect of this film have also been investigated at different temperatures.