[1] |
Li Xue, Cao Bao-Long, Wang Ming-Hao, Feng Zeng-Qin, Chen Shu-Fen.Perovskite light-emitting diode based on combination of modified hole-injection layer and polymer composite emission layer. Acta Physica Sinica, 2021, 70(4): 048502.doi:10.7498/aps.70.20201379 |
[2] |
Wu Jia-Long, Dou Yong-Jiang, Zhang Jian-Feng, Wang Hao-Ran, Yang Xu-Yong.Perovskite light-emitting diodes based on solution-processed metal-doped nickel oxide hole injection layer. Acta Physica Sinica, 2020, 69(1): 018101.doi:10.7498/aps.69.20191269 |
[3] |
Chen Jia-Mei, Su Hang, Li Wan, Zhang Li-Lai, Suo Xin-Lei, Qin Jing, Zhu Kun, Li Guo-Long.Research progress of enhancing perovskite light emitting diodes with light extraction. Acta Physica Sinica, 2020, 69(21): 218501.doi:10.7498/aps.69.20200755 |
[4] |
Huang Wei, Li Yue-Long, Ren Hui-Zhi, Wang Peng-Yang, Wei Chang-Chun, Hou Guo-Fu, Zhang De-Kun, Xu Sheng-Zhi, Wang Guang-Cai, Zhao Ying, Yuan Ming-Jian, Zhang Xiao-Dan.Perovskite light-emitting diodes based on n-type nanocrystalline silicon oxide electron injection layer. Acta Physica Sinica, 2019, 68(12): 128103.doi:10.7498/aps.68.20190258 |
[5] |
Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang.Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica, 2017, 66(15): 158501.doi:10.7498/aps.66.158501 |
[6] |
Jia Bo-Lun, Deng Ling-Ling, Chen Ruo-Xi, Zhang Ya-Nan, Fang Xu-Min.Numerical research of emission properties of localized surface plasmon resonance enhanced light-emitting diodes based on Ag@SiO2 nanoparticles. Acta Physica Sinica, 2017, 66(23): 237801.doi:10.7498/aps.66.237801 |
[7] |
Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica, 2015, 64(18): 187801.doi:10.7498/aps.64.187801 |
[8] |
Gong Zhi-Na, Yun Feng, Ding Wen, Zhang Ye, Guo Mao-Feng, Liu Shuo, Huang Ya-Ping, Liu Hao, Wang Shuai, Feng Lun-Gang, Wang Jiang-Teng.Increase in light extraction efficiency of vertical light emitting diodes by a photo-electro-chemical etching method. Acta Physica Sinica, 2015, 64(1): 018501.doi:10.7498/aps.64.018501 |
[9] |
Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi.Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801.doi:10.7498/aps.64.107801 |
[10] |
Chen Xin-Lian, Kong Fan-Min, Li Kang, Gao Hui, Yue Qing-Yang.Improvement of light extraction efficiency of GaN-based blue light-emitting diode by disorder photonic crystal. Acta Physica Sinica, 2013, 62(1): 017805.doi:10.7498/aps.62.017805 |
[11] |
Yue Qing-Yang, Kong Fan-Min, Li Kang, Zhao Jia.Study on the light extraction efficiency of GaN-based light emitting diode by using the defects of the photonic crystals. Acta Physica Sinica, 2012, 61(20): 208502.doi:10.7498/aps.61.208502 |
[12] |
Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie.A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica, 2011, 60(9): 098107.doi:10.7498/aps.60.098107 |
[13] |
Chen Yi-Xin, Shen Guang-Di, Gao Zhi-Yuan, Guo Wei-Ling, Zhang Guang-Chen, Han Jun, Zhu Yan-Xu.Relationship between light efficiency and juction temperature of high power AlGaInP light-emitting diode. Acta Physica Sinica, 2011, 60(8): 087206.doi:10.7498/aps.60.087206 |
[14] |
Zhu Hai-Na, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Kong Chao, Yan Guang, Gong Wei.Influence of well structure on efficiency of organic light-emitting diodes. Acta Physica Sinica, 2010, 59(11): 8093-8097.doi:10.7498/aps.59.8093 |
[15] |
Lin Han, Liu Shou, Zhang Xiang-Su, Liu Bao-Lin, Ren Xue-Chang.Enhanced external quantum efficiency of light emitting diodes by fabricating two-dimensional photonic crystal sapphire substrate with holographic technique. Acta Physica Sinica, 2009, 58(2): 959-963.doi:10.7498/aps.58.959 |
[16] |
Chen Jian, Li Xiao-Li, Li Hai-Hua, Wang Qing-Kang.Research of LED light extraction efficiency of photonic crystal with square and hexagonal lattice. Acta Physica Sinica, 2009, 58(9): 6216-6221.doi:10.7498/aps.58.6216 |
[17] |
Li Bing-Qian, Liu Yu-Hua, Feng Yu-Chun.The power dissipation of equivalent series resistance and its influence on lumen efficiency of GaN based high power light-emitting diodes. Acta Physica Sinica, 2008, 57(1): 477-481.doi:10.7498/aps.57.477 |
[18] |
Xiong Chuan-Bing, Jiang Feng-Yi, Wang Li, Fang Wen-Qing, Mo Chun-Lan.The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes. Acta Physica Sinica, 2008, 57(12): 7860-7864.doi:10.7498/aps.57.7860 |
[19] |
Sun Hui, Zhang Qi-Feng, Wu Jin-Lei.Ultraviolet light emitting diode based on ZnO nanowires. Acta Physica Sinica, 2007, 56(6): 3479-3482.doi:10.7498/aps.56.3479 |
[20] |
Hou Lin-Tao, Hou Qiong, Peng Jun-Biao, Cao Yong.Performance of polymer light-emitting diodes with saturated red-emitting poly(fluorine-co-4,7-dithien-2-yl-2,1,3-benzothiadiazole-carbazole or triphenylamine). Acta Physica Sinica, 2005, 54(11): 5377-5381.doi:10.7498/aps.54.5377 |