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Abstract

Silicon photonic switch is recognized as a cost-effective optical switching technology because it has many applications in long-haul telecommunication networks, short-reach data center and high-performance computing. In this paper, the research progress of various silicon photonic switch technologies is reviewed systematically. Firstly, the principles of three kinds of switch technologies including Mach-Zehnder interferometer (thermo-optic and carrier-injection types), micro-ring resonator (thermo-optic and carrier-injection types) and micro-electro-mechanical-system actuated waveguide coupler (electrostatic actuated type) are introduced. The switch technologies with the state-of-the-art insertion loss, crosstalk, switch time, footprint and power consumption are summarized and compared. Then the recent demonstrations of large-port silicon photonic matrix based on the above switch technologies are discussed. In this paper, we also investigate the key technologies such as topological architecture, passive components and optoelectronic packaging, which affect the performance of large-port optical switch matrix. Specifically, we study the scalability of various topologies, low-loss/broadband waveguide components, high-density optical/electrical packaging and control interface to improve the overall performance of the silicon photonic switch matrix. Finally, we discuss the critical technical challenges that might hamper the commercialization of silicon photonic switches and envision their future.

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Authors and contacts

Corresponding author:Fu Hong-Yan,hyfu@sz.tsinghua.edu.cn

Funds:Project supported by the Shenzhen Technology and Innovation Council, China (Grant Nos. JCYJ20170818094001391, JCYJ20180507183815699, KQJSCX20170727163424873) and Tsinghua-Berkeley Shenzhen Institute (TBSI) Faculty Start-up Fund, China.

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Cited By

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参考文献	年份	研究机构	相移器类型	相移器长/μm	开关时间	功耗/mW	损耗/dB	串扰/dB
[18]	2015	IBM	电光PIN	250	4 ns	1	1	–23
[19]	2013	CAS	电光PIN	400	–	–	–	–31
[20]	2011	IME	热光TiN	1000	144 μs	0.49	0.3	–23
[21]	2010	Kotura	电光PIN	4000	6 ns	0.6	3.2	–16
[22]	2015	UBC	热光TiN	4270	780 μs	0.05	3.3	–26
[23]	2013	MIT	热光掺杂硅	～10	2.4 μs	12.7	0.5	–20
[24]	2016	ZJU	热光TiN	20	–	–	–	–20
[25]	2014	AIST	热光TiN	～150	10 μs	30	0.5	–50
[26]	2016	IBM	电光PIN	250	4 ns	–	2	–34.5
[27]	2016	Huawei	热光TiN	250	1340/70 μs	0.5/10	0.5	–22

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参考文献	年份	研究机构	损耗/dB	串扰/dB	功耗/mW	开关时间	带宽/nm
[30]	2011	Columbia U	——	–12	——	2.78 ns	0.56
[31]	2009	HKUST	1.64	–11	～0.1	1.3 ns	0.45
[32]	2012	IME	4.3	–10	37	1 ns	0.8
[33]	2014	TU/e	2	–20	120	17 μs	0.8
[34]	2009	Cornell U	2	–9.8	17.4	7 ns	0.48
[35]	2014	SJTU	3.4	–20	0.69(电光) 2.3(热光)	414 ps	0.48

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研究机构	UC Berkeley^[45]	Tohoku U^[46]	Tohoku U^[47]	Aeponyx Inc^[48]
驱动电压/V	42	26	28.2	118
开关时间/μs	0.91	18	——	300
插入损耗/dB	0.47	1	2.6	14.8
带宽/nm	300	——	0.5	宽带
串扰/dB	–60	–17	–32.9	–40

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开关种类	MZI型		MRR型		MEM驱动波导型
开关种类	电光	热光	电光	热光	垂直耦合	平面耦合	端面耦合
保持开状态的功耗/mW	0.6–1	0.05–30	0.7–37	17.4–120	0	0	0
文献	[18,21,26]	[22,23,25,27]	[32,35]	[33,34]	[45]	[46,47]	[48]

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Vol. 68, Issue 10 - 2019-05-20

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