YANG Yao; LI Zaoyang; GAO Junhao; QI Chongchong; LI Dengnian; WU Guanghui; LIU Lijun

doi:10.7498/aps.74.20250595

Abstract

The top-seeded solution growth (TSSG) method is a critical technique for growing low-defect and high-quality silicon carbide (SiC) single crystals. A comprehensive numerical analysis model including induction heating, heat and mass transfer is developed for growing 6-inch SiC single crystals. The coupling effects of Lorentz force, centrifugal force, thermal buoyancy force and surface tension on the solution flow are considered, and the effects of crystal rotation speed on the velocity field, temperature field, carbon concentration field, crystal growth rate and carbon dissolution and precipitation on the crucible wall are systematically investigated. The results indicate that the Lorentz force in the solution results in a more complex flow field at low crystal rotation speeds. The crystal rotation speed should be controlled within the appropriate range to ensure that the carbon concentration distribution beneath the growth interface determined by the transport mode is coordinated with that at the growth interface determined by the temperature, which is beneficial for the uniform and high growth rate of SiC single crystals. Low rotation speeds reduce the growth rate of SiC single crystals, while high rotation speeds lead radial uniformity of growth rate to decrease. At a rotation speed of 25 r/min, the average growth rate of SiC single crystals is higher and the radial distribution uniformity is better. Further analysis is conducted on the dissolution and precipitation of carbon at the solution-crucible interface, and the regions, where the crucible wall dissolves quickly and SiC polycrystalline particles are generated, are located. The transport directions of polycrystalline particles are predicted based on the velocity field. The research results provide a scientific basis for growing 6-inch SiC single crystals by TSSG method.

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Corresponding author: LI Zaoyang, lizaoyang@mail.xjtu.edu.cn

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Materials	Parameters	Value	Units
Si	Density	2550	kg/m³
	Viscosity	8×10^–4	Pa·s
	Electrical conductivity	1.2×10⁶	S/m
	Thermal conductivity	65	W/(m·K)
	Specific heat	1000	J/(kg·K)
	Thermal expansion coefficient	0.00014	1/K
	Surface tension	–2.5×10^–4	N/m·K
	Surface emissivity	0.3	—
SiC	Density	3216	kg/m³
	Electrical conductivity	1000	S/m
	Thermal conductivity	30	W/(m·K)
	Specific heat	1290	J/(kg·K)
	Surface emissivity	0.5	—
Graphite	Electrical conductivity	75400	S/m
	Thermal conductivity	150×300/T	W/(m·K)
	Surface emissivity	0.9	—
Carbon felt	Electrical conductivity	430	S/m
	Thermal conductivity	0.336	W/(m·K)
	Surface emissivity	0.8	—
Copper	Electrical conductivity	5.99×10⁷	S/m
	Thermal conductivity	400	W/(m·K)
	Surface emissivity	0.5	—

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Vol. 74, Issue 15 - 2025-08-05

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