DING Wence; LIU Pu; ZHU Xianzhe; LI Xiaobo; YANG Kaike; ZHOU Guanghui

doi:10.7498/aps.74.20250758

Abstract

Anisotropic semi-Dirac materials exhibit unique manipulation selectivity in carrier conduction. Currently, the behavior of semi-Dirac electrons has been successfully observed in black phosphorus thin films and topological metal ZrSiS materials. This behavior manifests as linear and parabolic dispersion relations along two mutually perpendicular high-symmetry paths near the semi-Dirac point. Based on first-principles calculations, it is predicted that semi-Dirac electronic states can be realized in the structural system of anisotropic stacked graphene nanoribbon arrays on a graphene substrate in this work. The effects of nanoribbon width, the ratio of graphene width to nanoribbon width in the supercell, and external electric field on this semi-Dirac system band are further investigated. It is worth noting that the processes of the conduction band and valence band transitioning from non-conical-contact to conical-contact under an applied perpendicular electric field to form the semi-Dirac point are analyzed through computational simulation. Correspondingly, the system transforms from a metal with direction-dependent flat bands near the Fermi level to a direct bandgap semiconductor. The research provides theoretical reference for realizing and tuning semi-Dirac electronic states in two-dimensional material nanostructures.

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Corresponding author: DING Wence, wenceding@hutb.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61801520, 12174100, 12174099), the Fundamental Research Funds for Key Laboratory of Low Dimensional Quantum Structures and Quantum Control of Ministry of Education, China (Grant No. QSQC2410), the Natural Science Foundation of Hunan Province, China (Grant No. 2024JJ5111), the Fundamental Research Funds for Hunan Provincial Xiangjiang Laboratory, China (Grant No. 22XJ03017), and the Natural Science Foundation of Changsha City, China (Grant No. kq2208055).

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Structures	NM/eV	FM/eV	AFM/eV
GZ_AA(16)	–7892.70711	–7892.77758	–7892.77917
GZ_AA(32)	–13133.20879	–13133.28028	–13133.28086
GZ_AA(64)	–23614.69230	–23614.75757	–23614.75782
GZ_AB(16)	–7892.79525	–7892.86295	–7892.86507
GZ_AB(64)	–23616.29102	–23616.36383	–23616.36389
GA_AA(28)	–24303.04799	–24303.04799	–24303.04799
GA_AA(29)	–24630.63691	–24630.63691	–24630.63691
GA_AB(29)	–24630.82370	–24630.82370	–24630.82370
GA_AB(28)	–24303.23074	–24303.23074	–24303.23074
注: 加粗数据为对应的能量基态.

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Vol. 74, Issue 19 - 2025-10-05

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