XU Luo; ZHANG Xiaofu; YOU Lixing

doi:10.7498/aps.74.20250795

Abstract

Amorphous superconducting thin film materials have the advantages of high superconducting uniformity and good optical response sensitivity, which make them ideal materials for fabricating large-area and mid-infrared superconducting nanowire single-photon detectors (SNSPD). In this paper, three series of different amorphous superconducting films are deposited on Si wafers by room-temperature magnetron co-sputtering. For these films, the dependence of their physical properties, i.e. critical temperature T_c, Ginzburg-Landau coherence length ξ(0), normal-state electron diffusion coefficient D_e, magnetic penetration depth λ(0), and superconducting energy gap Δ(0), on film thickness is systematically investigated. Compared with amorphous tungsten silicide (WSi) and molybdenum germanide (MoGe) superconducting thin films, WGe alloys and WSi have similar superconducting properties, including critical temperature and coherence length, slightly lower normal-state electron diffusion coefficient and higher magnetic penetration depth. Compared with MoGe, both WGe and WSi alloys exhibit larger normal-state electron diffusion coefficient and higher magnetic penetration depths. By studying the superconducting properties of three different amorphous thin films, this research provides new material choices and experimental evidence for developing and optimizing the performance of large-area, high-sensitivity superconducting nanowire single-photon detectors.

Keywords:

Authors and contacts

Corresponding author: ZHANG Xiaofu, zhangxf@mail.sim.ac.cn

Funds: Project supported by the Science and Technology Innovation 2030-Innovation Program for Quantum Science and Technology (Grant No. 2023ZD0300100).

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Cited By

DownLoad: Full-Size Img PowerPoint

样品	d/nm	R_sn/Ω	T_c/K	ξ(0)/nm	D_e/(cm²·s^–1)	Δ(0)/meV	λ(0)/nm
WGe	4	471.25	3.84	10.55	0.76	0.58	734
	5	371.80	4.00	10.13	0.74	0.61	714
	10	185.30	4.55	9.54	0.71	0.69	668
	50	37.09	4.85	8.17	0.53	0.74	647
	100	18.49	4.92	7.95	0.50	0.75	642

DownLoad: CSV

样品	d/nm	R_sn/Ω	T_c/K	ξ(0)/nm	D_e/(cm²·s^–1)	Δ(0)/meV	λ(0)/nm
WSi	4	444.65	3.90	10.79	0.81	0.59	707
	5	354.90	4.12	10.48	0.80	0.63	687
	6	298.85	4.26	10.22	0.77	0.65	680
	8	221.84	4.44	9.80	0.73	0.67	662
	10	176.25	4.61	9.51	0.70	0.70	648
	20	88.31	4.81	9.19	0.68	0.73	635
	30	57.95	4.87	8.83	0.62	0.74	626
	50	35.47	4.91	8.48	0.57	0.75	630
	100	17.65	4.94	8.27	0.55	0.75	626

DownLoad: CSV

样品	d/nm	R_sn/Ω	T_c/K	ξ(0)/nm	D_e/(cm²·s^–1)	Δ(0)/meV	λ(0)/nm
MoGe	4	378.75	5.31	8.14	0.62	0.81	560
	5	298.30	5.96	7.66	0.60	0.91	524
	8	186.59	6.37	7.42	0.60	0.97	507
	10	148.76	6.61	7.25	0.59	1.00	497
	20	74.15	7.03	6.73	0.53	1.07	481
	30	49.12	7.14	6.54	0.50	1.09	476
	100	14.52	7.28	6.18	0.46	1.11	468

DownLoad: CSV

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Vol. 74, Issue 18 - 2025-09-20

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