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2021, 70(16): 162401.
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Wang Su-Jie, Li Shu-Qiang, Wu Xiao-Ming, Chen Fang, Jiang Feng-Yi. Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP. Acta Physica Sinica,
2020, 69(4): 048103.
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2020, 69(11): 117701.
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2019, 68(15): 158101.
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2018, 67(18): 182401.
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2015, 64(12): 127304.
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2014, 63(11): 117302.
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Huang Ya-Ping, Yun Feng, Ding Wen, Wang Yue, Wang Hong, Zhao Yu-Kun, Zhang Ye, Guo Mao-Feng, Hou Xun, Liu Shuo. The reflectivity and ohmic contact resistivity of Ni/Ag/Ti/Au in contact with p-GaN. Acta Physica Sinica,
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2012, 61(17): 177201.
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Fang Chao, Liu Ma-Lin. The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica,
2012, 61(9): 097802.
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Zhou Nai-Gen, Hong Tao, Zhou Lang. A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica,
2012, 61(2): 028101.
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Pan Shu-Wan, Qi Dong-Feng, Chen Song-Yan, Li Cheng, Huang Wei, Lai Hong-Kai. Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact. Acta Physica Sinica,
2011, 60(9): 098108.
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Wang Guang-Xu, Jiang Feng-Yi, Feng Fei-Fei, Liu Jun-Lin, Qiu Chong. N-polar n-type ohmic contact of GaN-based LED on Si substrate. Acta Physica Sinica,
2010, 59(8): 5706-5709.
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Huang Wei, Chen Zhi-Zhan, Chen Yi, Shi Er-Wei, Zhang Jing-Yu, Liu Qing-Feng, Liu Qian. Effect of Ni thickness on the contact properties of Ni/6H-SiC analyzed by combinatorial method. Acta Physica Sinica,
2010, 59(5): 3466-3472.
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Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin. Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica,
2008, 57(9): 6007-6012.
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Ding Zhi-Bo, Wang Kun, Chen Tian-Xiang, Chen Di, Yao Shu-De. Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time. Acta Physica Sinica,
2008, 57(4): 2445-2449.
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Tang Xiao-Yan, Zhang Yi-Men, Zhang He-Ming, Zhang Yu-Ming, Dai Xian-Ying, Hu Hui-Yong. 3UCVD deposition SiO2 on SiC wafer and its C-V measurement. Acta Physica Sinica,
2004, 53(9): 3225-3228.
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2002, 51(8): 1793-1797.
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