CHENG Peng; YE Tingting; PAN Xiaomei; XUE Erqiao; YAO Deyuan; DING Junfeng

doi:10.7498/aps.74.20250912

Abstract

The rapid development of optoelectronic technologies has raised increasingly requirements for the photoelectric properties of semiconductor materials, thereby promoting the exploration of more efficient and controllable modulation strategies. High-pressure technology, as a clean and effective external-field method, can accurately modulate the crystal structure and electronic states of materials. This modulation can induce novel phase transitions and physical effects, thereby significantly improving performance. In recent years, high-pressure technique has emerged as a powerful tool for optimizing photoelectric properties of semiconductor materials, providing new perspectives for enhancing performance and demonstrating significant research value and application potential.This review paper comprehensively summarizes recent research progress of pressure-induced evolution of photoelectric properties in various material systems, such as two-dimensional transition metal dichalcogenides, metal and non-metal halides, perovskites, and other representative semiconductors. These materials exhibit a wide variety of pressure-induced structural transformations, accompanied by photocurrent enhancement, broadband spectral response, self-powered photoresponse, and polarity reversal. Furthermore, the intrinsic links between these structural evolutions and the corresponding photoelectric behaviors are systematically examined.Scientific issues and development bottlenecks in this area are also discussed. Despite notable advances, there are still several challenges, including the insufficient understanding of intrinsic correlations between structure and photoelectric properties, the lack of comprehensive evaluation parameters. How to realize pressure-enhanced photoelectric properties for applications under ambient conditions is another key challenge. Addressing these issues will be essential for advancing both fundamental understanding and practical applications.Overall, pressure modulated photoelectric properties present both significant challenges and exciting opportunities, providing valuable guidance for designing advanced optoelectronic materials and devices.

Keywords:

high-pressure physics /
photoresponse characteristics /
structural phase transition /
in-situ high-pressure characterization

Authors and contacts

Corresponding author: DING Junfeng, junfengding@issp.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 52472278, 52002372, 11874361, 11774354) and the University Natural Science Research Project of Anhui Province, China (Grant No. 2024AH051081).

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材料名称	压力范围/GPa	光电流较常压数值	其他现象	参考文献
多层MoS₂	0—35.0	—	光电流增益–7.5%/GPa、金属化	[40]
PtS₂	0—26.8	约6倍	—	[41]
块状ReS₂	0—50.0	2个数量级	金属化	[42]
WS₂	0—17.2	2个数量级	宽谱响应	[43]
ZrSe₂	0—26.5	3个数量级	金属化、负光电导	[44]
PbI₂	0—32.6	2个数量级	宽谱响应、自驱动光响应	[46,47]
BiI₃	0—30.0	3个数量级	宽谱响应、自驱动光响应	[48]
SbI₃	0—10.0	近10倍	自驱动光响应	[49,50]
CsI₃	0—16.7	近5个数量级	宽谱响应	[51]
SnI₄	0—11.5	约5个数量级	金属化	[52]
RhI₃	0—30.0	约5个数量级	金属化	[53]
AsI₃	0—12.0	约2倍	—	[54]
(C₆H₅CH₂NH₃)₂CuBr₄	0—40.0	28 GPa光电导率达到峰值^*	—	[55]
Cs₂PbI₂Cl₂	0—26.9	3个数量级	—	[24]
CH₃NH₃PbBr₃	0—5.6	0.7 GPa达到峰值^*	—	[56]
CH₃NH₃PbI₃	0—8.3	4.5倍	“记忆效应”	[57]
CsPbBr₃	0—9.2	1.4 GPa达到峰值*	—	[58]
CsPbCl₃	0—22.1	近2倍	—	[59]
CH₃NH₃SnI₃	0—31.0	约1—2个数量级	非晶化	[60]
Cs₃Bi₂I₉	0—26.7	5个数量级	非晶化、宽谱响应	[61]
NbOI₂	0—23.8	3个数量级	宽谱响应、导电类型切换	[62]
SbSI	0—28.5	14 GPa达到峰值*	自驱动光响应	[63]
g-C₃N₄	0—46.0	约50%	带隙减小、非晶化、“记忆效应”	[66,67]
CuInP₂S₆	0—23.5	2个数量级	金属化、自驱动光响应	[68]
NiPS₃	0—50.1	5个数量级	宽谱响应、“记忆效应”	[69]
Bi₉O_7.5S₆	0—58.1	4个数量级	—	[70]
BiOBr	0—25.0	1个数量级	—	[71]
KBiFe₂O₅	0—35.0	2个数量级	—	[72]
WO₃/CuO异质结	0—33.0	—	负光电导	[73]
CrSb₂	0—41.0	—	负光电导	[74]
Cr₂Se₃	0—31.8	3.7倍	负光电导	[75]
块状Si	0—20.8	1—2个数量级	金属化、负光电导	[76]
CuInS₂纳米晶	0—50.2	近4倍	带隙增大	[77]
Bi₂S₃	0—34.3	5.6倍	宽谱响应、负光电导	[84]
注: *代表文献中未提及光电流具体变化数值.

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