Controllable synthesis of two-dimensional ferroelectric α-In<sub>2</sub>Se<sub>3</sub> by low-temperature chemical vapor deposition

WANG Chengyang; LI Yuexin; HE Yanyan; LI Mei; ZHONG Lun; JIE Wenjing

doi:10.7498/aps.74.20251070

Abstract

Two-dimensional ferroelectric α-In₂Se₃ possesses many fascinating physical properties. However, chemical-vapor-deposited ferroelectric α-In₂Se₃ typically requires high temperatures (>650 ℃). In this work, α-In₂Se₃ is synthesized at 400 to 460 ℃ by introducing a KCl/LiCl/NH₄Cl ternary catalyst, resulting in a 200 ℃ reduction in growth temperature compared with ferroelectric α-In₂Se₃ synthesized by the traditional chemical vapor deposition (CVD) method. The surface morphology of the as-prepared material is controlled by temperature and gas flow rate. As the growth temperature increases from 400 to 460 ℃, the synthesized α-In₂Se₃ is changed from discrete hexagonal flakes to a continuous and uniform thin film, which is confirmed by the scanning electron microscope. Raman spectroscopy shows that the characteristic peaks of In₂Se₃ are located at 103, 180, and 195 cm^–1, respectively, indicating that the CVD-grown In₂Se₃ is α-phase. Furthermore, energy dispersive spectrometer and X-ray photoelectron spectroscopy indicate that the elemental composition is close to the ideal stoichiometric ratio, confirming the successful synthesis of the α-In₂Se₃. Then, the as-prepared α-In₂Se₃ is transferred onto Si/SiO₂ substrate for device fabrication. Atomic force microscope indicates that the film is uniform, with an approximate thickness of 63 nm. The fabricated two-terminal memristors exhibit analogous resistive switching behaviors. And such memristors are used to achieve synaptic functions of long-term potentiation/long-term depression. For artificial neural network simulations based on the synaptic memristors, the recognition accuracy for hand-written digit image exceeds 90%. This work provides a practical method for growing two-dimensional ferroelectric α-In₂Se₃ at low temperatures for applications in synaptic devices and neuromorphic computing.

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Corresponding author: JIE Wenjing, wenjing.jie@sicnu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 62474118, 52233014).

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In源	Se源	催化剂	衬底	文献
In₂O₃ (650—750 ℃)	Se粉(300 ℃)	无	mica	[17]
In₂O₃ (680—750 ℃)	Se粉(250 ℃)	无	mica	[18]
In₂O₃ (700—900 ℃)	Se粉	无	mica	[19]
In₂O₃ (630 ℃)	Se粉(250 ℃)	无	mica	[20]
In₂O₃ (850 ℃)	Se粉(270 ℃)	无	SiO₂/Si	[14]
In₂O₃ (550/650 ℃)	Se粉(270 ℃)	无	SiO₂/Si	[21]
In₂O₃ (670 ℃)	Se粉(250 ℃)	无	mica	[22]
In₂Se₃ (850 ℃)	—	无	SiO₂/Si	[23]
In₂O₃ (660 ℃)	Se粉(350 ℃)	无	mica	[24]
In₂O₃ (660 ℃)	Se粉(300 ℃)	无	mica	[25]
InCl₃ (400—460 ℃)	Se粉(300 ℃)	KCl/NaCl/ NH₄Cl	SiO₂/Si	本工作

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Vol. 74, Issue 22 - 2025-11-20

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