SONG Liuqin; DONG Wan; ZHANG Yifan; SONG Yuanhong

doi:10.7498/aps.74.20251236

Abstract

Low-temperature plasma deposition and etching technologies play a vital role in plasma-assisted manufacturing fields such as semiconductor chip fabrication, flat-panel displays, and photovoltaic devices. The physical and chemical interaction mechanisms between plasma and materials form the fundamental scientific basis for elucidating the nature of process dynamics, optimizing processing parameters, and improving device performance and reliability.In this work, by using a fluid hybrid model coupled with a surface profile evolution model, the plasma discharge characteristics and the deposition/etching surface profile under different discharge parameters are self-consistently simulated, and the simulation results and discussions of some research cases are also presented.During amorphous silicon thin-film deposition, it is found that the radial distribution of electron density generated in the plasma discharge process is non-uniform, which can lead to the non-uniform distribution of neutral and ion fluxes on the substrate surface, as well as the non-uniformity of film thickness or film quality. Moreover, the ion energy distribution strongly influences the composition and bonding configurations in the film, thereby affecting its quality and performance.In the studies of SiO₂ etching using fluorocarbon mixed-gas discharges, it is found that under voltage waveform tailoring, adjusting the electrode gap, phase, and harmonic number can flexibly control ion and neutral fluxes. This allows the discharge parameters to be optimized in order to improve etching performance. During Si etching with inductively coupled Ar/Cl₂ plasma, the application of tailored bias waveform causes the ion energy to accumulate predominantly in the high-energy range, which can significantly enhance etching efficiency.In summary, this work systematically investigates how the self-consistent coupling between plasma discharge and deposition/etching processes can be achieved through the hybrid simulation, while further elucidating the essential synergistic roles of ions and neutral radicals. It is hoped that these findings will serve as valuable references for the optimizing plasma processes and equipment.

Keywords:

plasma-enhanced chemical vapor deposition /
plasma etching /
synergistic effect of ions and neutrals

Authors and contacts

Corresponding author: DONG Wan, wandong@dlut.edu.cn ; ZHANG Yifan, zhangefan@dlut.edu.cn ;

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 12020101005, 12475202, 12405289), the Joint Fund of the Natural Science Foundation of Liaoning Province, China (Grant No. 2023-BSBA-089), and the International Exchange Fund of Dalian University of Technology 2025 “Excellence Co-creation Program”, China (Grant No. DUTIO-ZG-202502).

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Vol. 74, Issue 23 - 2025-12-05

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Corresponding author: DONG Wan, wandong@dlut.edu.cn ; ZHANG Yifan, zhangefan@dlut.edu.cn ;

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