High-pressure luminescence properties of Eu2+-doped Si3N4 nanowires and their application in optical pressure sensing

Abstract views: {{if !(article.articleBusiness.viewCount && article.articleBusiness.viewCount != '')}}0{{/if}}
PDF Downloads: {{if !(article.articleBusiness.pdfDownCount && article.articleBusiness.pdfDownCount != '')}}0{{/if}}
Cited By: 0

ZHOU Minghan; ZHAO Jiahui; CHEN Shuanglong; WANG Qiushi; WANG Xuejiao; LIU Cailong

doi:10.7498/aps.75.20251340

Search

x

ZHOU Minghan, ZHAO Jiahui, CHEN Shuanglong, WANG Qiushi, WANG Xuejiao, LIU Cailong. High-pressure luminescence properties of Eu2+-doped Si3N4 nanowires and their application in optical pressure sensingJ. Acta Physica Sinica, 2026, 75(3): 030807. DOI: 10.7498/aps.75.20251340

Citation:

ZHOU Minghan, ZHAO Jiahui, CHEN Shuanglong, WANG Qiushi, WANG Xuejiao, LIU Cailong. High-pressure luminescence properties of Eu2+-doped Si3N4 nanowires and their application in optical pressure sensingJ. Acta Physica Sinica, 2026, 75(3): 030807. DOI: 10.7498/aps.75.20251340

Citation:

ZHOU Minghan, ZHAO Jiahui, CHEN Shuanglong, WANG Qiushi, WANG Xuejiao, LIU Cailong. High-pressure luminescence properties of Eu2+-doped Si3N4 nanowires and their application in optical pressure sensingJ. Acta Physica Sinica, 2026, 75(3): 030807. DOI: 10.7498/aps.75.20251340