Forward transport, degradation and breakdown of hydrogen-ion-implanted GaN high electron mobility transistor gate

Abstract views: {{if !(article.articleBusiness.viewCount && article.articleBusiness.viewCount != '')}}0{{/if}}
PDF Downloads: {{if !(article.articleBusiness.pdfDownCount && article.articleBusiness.pdfDownCount != '')}}0{{/if}}
Cited By: 0

ZHANG Dongkai; HU Qing; GUO Yulong; ZHAI Ying; LIU Xushan; WANG Zixu; YU Guohao; YAN Dawei

doi:10.7498/aps.75.20251343

Search

x

ZHANG Dongkai, HU Qing, GUO Yulong, ZHAI Ying, LIU Xushan, WANG Zixu, YU Guohao, YAN Dawei. Forward transport, degradation and breakdown of hydrogen-ion-implanted GaN high electron mobility transistor gateJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251343

Citation:

ZHANG Dongkai, HU Qing, GUO Yulong, ZHAI Ying, LIU Xushan, WANG Zixu, YU Guohao, YAN Dawei. Forward transport, degradation and breakdown of hydrogen-ion-implanted GaN high electron mobility transistor gateJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251343

Citation:

ZHANG Dongkai, HU Qing, GUO Yulong, ZHAI Ying, LIU Xushan, WANG Zixu, YU Guohao, YAN Dawei. Forward transport, degradation and breakdown of hydrogen-ion-implanted GaN high electron mobility transistor gateJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251343