Novel bulk silicon lateral insulated gate bipolar transistor with low hole substrate current

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DUAN Baoxing; LI Yuying; TANG Chunping; REN Yuhao; YANG Yintang

doi:10.7498/aps.75.20251354

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DUAN Baoxing, LI Yuying, TANG Chunping, REN Yuhao, YANG Yintang. Novel bulk silicon lateral insulated gate bipolar transistor with low hole substrate currentJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251354

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DUAN Baoxing, LI Yuying, TANG Chunping, REN Yuhao, YANG Yintang. Novel bulk silicon lateral insulated gate bipolar transistor with low hole substrate currentJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251354

Citation:

DUAN Baoxing, LI Yuying, TANG Chunping, REN Yuhao, YANG Yintang. Novel bulk silicon lateral insulated gate bipolar transistor with low hole substrate currentJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251354