As Moore's Law faces limitations in scaling device physical dimensions and reducing computational power consumption, traditional silicon-based integrated circuit (IC) technologies, after half a century of success, are encountering unprecedented challenges. These limitations are especially apparent in emerging fields such as artificial intelligence, big data processing, and high-performance computing, where the demand for computational power and energy efficiency is growing. Therefore, the exploration of novel materials and hardware architectures is crucial to overcoming these challenges. Two-dimensional (2D) materials, with their unique physical properties such as the absence of dangling bonds, high carrier mobility, tunable band gaps, and high photonic responses, have emerged as ideal candidates for next-generation electronic devices and integrated circuits (ICs). Notably, 2D materials such as graphene, transition metal dichalcogenides (TMDs), and hexagonal boron nitride (h-BN) have demonstrated immense potential in electronics, optoelectronics, and flexible sensing applications.
This paper provides a comprehensive review of recent advancements in the application of 2D materials in integrated circuits, analyzing the challenges and solutions related to large-scale integration, device design, functional circuit modules, and three-dimensional integration. Through a detailed examination of the basic properties of 2D materials, their constituent functional devices, and multifunctional integrated circuits, this paper presents a series of innovative ideas and methodologies, showcasing the promising application prospects of 2D materials in future ICs.
The research methodology involves a detailed analysis of the physical properties of common 2D materials (such as graphene, TMDs, and h-BN) and explores typical application cases. It discusses how to utilize the excellent properties of these materials to fabricate high-performance single-function devices, integrated circuit modules, and 3D integrated chips. In particular, the paper focuses on solving the challenges related to large-scale growth, device integration, and interface engineering of 2D materials. By comparing the performance and applications of various materials, it reveals the unique advantages of 2D materials in the semiconductor industry and their potential in IC design.
Despite the outstanding performance of 2D materials in laboratory environments, significant challenges remain in practical applications, especially in large-scale production, device integration, and three-dimensional integration. Achieving high-quality, large-area growth of 2D materials, reducing interface defects, and improving device stability and reliability are still core issues that need to be addressed by both the research and industrial communities. However, with continuous advancements in 2D material fabrication techniques and optimization of integration processes, these challenges are gradually being overcome, and the application prospects of 2D materials are expanding.
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