Point defects in the semiconducting <i>β</i> -TeO<sub>2</sub> monolayer: Structural stability and electronic properties

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XU Luya; LIN Hengfu; LIU Huiying; WU Dongyang; WANG Jie; XU Zeliang

doi:10.7498/aps.75.20251567

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中国物理学会期刊

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XU Luya, LIN Hengfu, LIU Huiying, WU Dongyang, WANG Jie, XU Zeliang. Point defects in the semiconducting β -TeO2 monolayer: Structural stability and electronic properties. Acta Physica Sinica, 2026, 75(9): 090703. DOI: 10.7498/aps.75.20251567

Citation:

XU Luya, LIN Hengfu, LIU Huiying, WU Dongyang, WANG Jie, XU Zeliang. Point defects in the semiconducting β -TeO2 monolayer: Structural stability and electronic properties. Acta Physica Sinica, 2026, 75(9): 090703. DOI: 10.7498/aps.75.20251567

Citation:

XU Luya, LIN Hengfu, LIU Huiying, WU Dongyang, WANG Jie, XU Zeliang. Point defects in the semiconducting β -TeO2 monolayer: Structural stability and electronic properties. Acta Physica Sinica, 2026, 75(9): 090703. DOI: 10.7498/aps.75.20251567